- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄373635 > TGF2021-01 (TRIQUINT SEMICONDUCTOR INC) DC-12 GHz Discrete Power pHEMT PDF資料下載
參數(shù)資料
| 型號(hào)： | TGF2021-01 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | DC-12 GHz Discrete Power pHEMT |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.57 X 0.53 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-2 |
| 文件頁(yè)數(shù)： | 8/8頁(yè) |
| 文件大?。?/td> | 166K |
| 代理商： | TGF2021-01 |
Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
8
TGF2021-01
Reflow process assembly notes:
Use AuSn (80/20) solder with limited exposure to temperatures at or above 300
°
C for 30 sec
An alloy station or conveyor furnace with reducing atmosphere should be used.
Do not use flux
Coefficient of thermal expansion matching is critical for long-term reliability.
Devices must be stored in a dry nitrogen atmosphere.
Component placement and adhesive attachment assembly notes:
Vacuum pencils and/or vacuum collets are the preferred method of pick up.
Air bridges must be avoided during placement.
The force impact is critical during auto placement.
Organic attachment can be used in low-power applications.
Curing should be done in a convection oven; proper exhaust is a safety concern.
Microwave or radiant curing should not be used because of differential heating.
Coefficient of thermal expansion matching is critical.
Interconnect process assembly notes:
Thermosonic ball bonding is the preferred interconnect technique.
Force, time, and ultrasonics are critical parameters.
Aluminum wire should not be used.
Devices with small pad sizes should be bonded with 0.0007-inch wire.
Maximum stage temperature is 200
°
C.
Assembly Process Notes
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF2021-02 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-04 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-12 | DC - 12 GHz Discrete power pHEMT |
| TGF2022-06 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-12 | DC - 20 GHz Discrete power pHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF2021-02 | 功能描述:射頻GaAs晶體管 DC-12GHz 2mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2021-04 | 功能描述:射頻GaAs晶體管 DC-12GHz 4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2021-04-SD | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT 制造商:TriQuint Semiconductor 功能描述:Trans JFET N-CH 1.8A 4-Pin(3+Tab) SOT-89 Bulk |
| TGF2021-04-SD T/R | 功能描述:功率放大器 DC-4GHz 5Volts RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
| TGF2021-04-SDT | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。