參數(shù)資料
型號： TGF2021-01
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類： 衰減器
英文描述： DC-12 GHz Discrete Power pHEMT
中文描述： 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER
封裝： 0.57 X 0.53 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-2
文件頁數(shù)： 6/8頁
文件大小： 166K
代理商： TGF2021-01
Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
6
TGF2021-01
Unmatched S-parameters for 1 mm pHEMT
Bias Conditions: Vd = 12V, Idq = 75mA
Frequency s11
(GHz)
0.5
s11 ang
deg
s21
dB
s21 ang
deg
145.86
124.02
110.84
101.98
95.34
89.97
85.36
81.26
77.50
73.99
70.66
67.48
64.40
61.42
58.51
55.67
52.87
50.13
47.42
44.75
42.12
39.51
36.93
34.38
31.85
29.35
26.87
24.41
21.97
19.55
17.14
14.76
12.39
10.04
s12
dB
s12 ang
deg
s22
dB
s22 ang
deg
dB
-0.270
-0.569
-0.733
-0.817
-0.862
-0.889
-0.904
-0.914
-0.921
-0.924
-0.926
-0.927
-0.927
-0.926
-0.924
-0.922
-0.920
-0.917
-0.914
-0.911
-0.907
-0.903
-0.899
-0.895
-0.891
-0.886
-0.882
-0.877
-0.872
-0.867
-0.862
-0.857
-0.852
-0.847
-0.842
-0.837
-0.832
-0.827
-0.821
-0.816
-0.811
-0.806
-0.801
-0.796
-0.791
-0.786
-0.781
-0.776
-0.771
-0.766
-0.761
-0.756
-61.01
-99.70
-121.84
-135.39
-144.39
-150.81
-155.63
-159.42
-162.50
-165.08
-167.27
-169.19
-170.88
-172.41
-173.79
-175.06
-176.24
-177.33
-178.37
-179.34
179.73
178.84
177.99
177.17
176.37
175.61
174.86
174.13
173.42
172.72
172.04
171.37
170.72
170.07
169.43
168.80
168.18
167.57
166.96
166.36
165.77
165.18
164.60
164.02
163.44
162.87
162.31
161.75
161.19
160.63
160.08
159.53
25.258
22.646
20.206
18.158
16.443
14.983
13.718
12.603
11.609
10.711
9.894
9.142
8.447
7.801
7.196
6.627
6.090
5.582
5.099
4.639
4.198
3.777
3.372
2.982
2.606
2.242
1.890
1.549
1.218
0.896
0.582
0.276
-0.022
-0.314
-0.600
-0.880
-1.155
-1.424
-1.689
-1.950
-2.206
-2.459
-2.709
-2.955
-3.198
-3.439
-3.677
-3.913
-4.147
-4.379
-4.609
-4.837
-33.563
-30.161
-29.091
-28.656
-28.452
-28.353
-28.308
-28.295
-28.303
-28.326
-28.360
-28.403
-28.455
-28.512
-28.576
-28.644
-28.717
-28.794
-28.874
-28.958
-29.044
-29.133
-29.223
-29.315
-29.407
-29.500
-29.592
-29.684
-29.774
-29.863
-29.949
-30.031
-30.111
-30.185
-30.256
-30.320
-30.379
-30.431
-30.476
-30.515
-30.545
-30.568
-30.582
-30.588
-30.586
-30.576
-30.557
-30.530
-30.495
-30.453
-30.404
-30.347
57.93
38.19
27.10
20.33
15.79
12.52
10.03
8.05
6.43
5.07
3.91
2.90
2.03
1.26
0.59
0.01
-0.50
-0.94
-1.31
-1.61
-1.85
-2.03
-2.15
-2.20
-2.21
-2.15
-2.03
-1.86
-1.63
-1.35
-1.01
-0.62
-0.18
0.31
0.85
1.43
2.06
2.72
3.42
4.14
4.89
5.67
6.46
7.26
8.07
8.89
9.70
10.51
11.30
12.09
12.85
13.59
-5.656
-7.703
-9.305
-10.338
-10.943
-11.253
-11.362
-11.336
-11.218
-11.036
-10.811
-10.558
-10.287
-10.005
-9.718
-9.430
-9.143
-8.859
-8.579
-8.306
-8.039
-7.779
-7.526
-7.280
-7.042
-6.811
-6.587
-6.371
-6.161
-5.959
-5.762
-5.573
-5.389
-5.212
-5.040
-4.874
-4.713
-4.557
-4.407
-4.261
-4.120
-3.984
-3.852
-3.724
-3.600
-3.479
-3.363
-3.250
-3.141
-3.035
-2.932
-2.833
-27.36
-43.13
-51.41
-56.61
-60.67
-64.34
-67.88
-71.37
-74.81
-78.20
-81.53
-84.79
-87.98
-91.08
-94.10
-97.04
-99.90
-102.69
-105.42
-108.07
-110.67
-113.20
-115.68
-118.11
-120.49
-122.83
-125.12
-127.37
-129.57
-131.75
-133.88
-135.98
-138.05
-140.09
-142.09
-144.07
-146.02
-147.94
-149.83
-151.70
-153.55
-155.37
-157.16
-158.94
-160.69
-162.42
-164.12
-165.81
-167.48
-169.13
-170.75
-172.36
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
6
6.5
7
7.5
8
8.5
9
9.5
10
10.5
11
11.5
12
12.5
13
13.5
14
14.5
15
15.5
16
16.5
17
17.5
18
18.5
19
19.5
20
20.5
21
21.5
22
22.5
23
23.5
24
24.5
25
25.5
26
7.70
5.38
3.08
0.79
-1.49
-3.75
-5.99
-8.23
-10.45
-12.65
-14.85
-17.03
-19.21
-21.37
-23.52
-25.66
-27.79
-29.91
相關PDF資料
PDF描述
TGF2021-02 DC - 12 GHz Discrete power pHEMT
TGF2021-04 DC - 12 GHz Discrete power pHEMT
TGF2021-12 DC - 12 GHz Discrete power pHEMT
TGF2022-06 DC - 20 GHz Discrete power pHEMT
TGF2022-12 DC - 20 GHz Discrete power pHEMT
相關代理商/技術參數(shù)
參數(shù)描述
TGF2021-02 功能描述:射頻GaAs晶體管 DC-12GHz 2mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
TGF2021-04 功能描述:射頻GaAs晶體管 DC-12GHz 4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導 gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風格: 封裝 / 箱體:
TGF2021-04-SD 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT 制造商:TriQuint Semiconductor 功能描述:Trans JFET N-CH 1.8A 4-Pin(3+Tab) SOT-89 Bulk
TGF2021-04-SD T/R 功能描述:功率放大器 DC-4GHz 5Volts RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝:
TGF2021-04-SDT 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT
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