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參數(shù)資料
| 型號： | TGF2021-04 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | DC - 12 GHz Discrete power pHEMT |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.57 X 1.30 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-8 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 132K |
| 代理商： | TGF2021-04 |
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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DC - 12 GHz Discrete power pHEMT TGF2021-04
Key Features and Performance
Frequency Range: DC - 12 GHz
> 36 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
4mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 300-500mA
(U
nder RF Drive, Id rises from 300mA to 960mA)
Chip Dimensions: 0.57 x 1.30 x 0.10 mm
(0.022 x 0.051 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Product Description
The TriQuint TGF2021-04 is a discrete 4 mm
pHEMT which operates from DC-12 GHz.
The TGF2021-04 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-04 typically provides
> 36 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-04 appropriate for high efficiency
applications.
The TGF2021-04 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-04 has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF2021-12 | DC - 12 GHz Discrete power pHEMT |
| TGF2022-06 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-12 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-24 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-48 | DC - 20 GHz Discrete power pHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF2021-04-SD | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT 制造商:TriQuint Semiconductor 功能描述:Trans JFET N-CH 1.8A 4-Pin(3+Tab) SOT-89 Bulk |
| TGF2021-04-SD T/R | 功能描述:功率放大器 DC-4GHz 5Volts RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
| TGF2021-04-SDT | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT |
| TGF2021-04-SG | 功能描述:功率放大器 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
| TGF2021-08 | 功能描述:射頻GaAs晶體管 DC-12GHz 8mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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