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參數(shù)資料
| 型號(hào)： | TGF2021-04 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | DC - 12 GHz Discrete power pHEMT |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.57 X 1.30 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-8 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大小： | 132K |
| 代理商： | TGF2021-04 |
Advance Product Information
September 19, 2005
TGF2021-04
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
2
TABLE I
MAXIMUM RATINGS
Symbol
V
+
V
-
I
+
| I
G
|
P
IN
P
D
T
CH
T
M
T
STG
Parameter 1/
Value
12.5 V
-5V to 0V
1.8 A
28 mA
31 dBm
See note 3
150
°
C
320
°
C
-65 to 150
°
C
Notes
2/
Positive Supply Voltage
Negative Supply Voltage Range
Positive Supply Current
Gate Supply Current
Input Continuous Wave Power
Power Dissipation
Operating Channel Temperature
Mounting Temperature (30 Seconds)
Storage Temperature
2/
2/
2/ 3/
4/
1/
These ratings represent the maximum operable values for this device.
2/
Combinations of supply voltage, supply current, input power, and output power shall
not exceed P
D
.
3/
For a median life time of 1E+6 hrs, Power dissipation is limited to:
P
D
(max) = (150
°
C – TBASE
°
C) / 21.7 (
°
C/W)
4/
Junction operating temperature will directly affect the device median time to failure
(T
M
). For maximum life, it is recommended that junction temperatures be maintained
at the lowest possible levels.
TABLE II
DC PROBE CHARACTERISTICS
(T
A
= 25
q
C, Nominal)
Symbol
Parameter
Minimum
Typical
Maximum
Unit
Idss
Saturated Drain Current
-
1200
-
mA
Gm
Transconductance
-
1500
-
mS
V
P
Pinch-off Voltage
-1.5
-1
-0.5
V
V
BGS
Breakdown Voltage
Gate-Source
Breakdown Voltage
Gate-Drain
-30
-
-14
V
V
BGD
-30
-
-14
V
Note: For
TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF2021-12 | DC - 12 GHz Discrete power pHEMT |
| TGF2022-06 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-12 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-24 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-48 | DC - 20 GHz Discrete power pHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF2021-04-SD | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT 制造商:TriQuint Semiconductor 功能描述:Trans JFET N-CH 1.8A 4-Pin(3+Tab) SOT-89 Bulk |
| TGF2021-04-SD T/R | 功能描述:功率放大器 DC-4GHz 5Volts RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
| TGF2021-04-SDT | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT |
| TGF2021-04-SG | 功能描述:功率放大器 20-4000MHz Gain 12dB 12.5Volts Pwr 4 dBm RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
| TGF2021-08 | 功能描述:射頻GaAs晶體管 DC-12GHz 8mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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