參數(shù)資料
型號(hào)： TGF2022-48
廠商： TRIQUINT SEMICONDUCTOR INC
元件分類(lèi)： 衰減器
英文描述： DC - 20 GHz Discrete power pHEMT
中文描述： 0 MHz - 20000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER
封裝： 0.57 X 2.42 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-18
文件頁(yè)數(shù)： 1/8頁(yè)
文件大?。?/td> 152K
代理商： TGF2022-48
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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Frequency (GHz)
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DC - 20 GHz Discrete power pHEMT TGF2022-48
Key Features and Performance
Frequency Range: DC - 20 GHz
> 37 dBm Nominal Psat
58% Maximum PAE
45 dBm Nominal OIP3
13 dB Nominal Power Gain
Suitable for high reliability applications
4.8mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 360-600mA
(U
nder RF Drive, Id rises from 360mA to 1200mA)
Chip Dimensions: 0.57 x 2.42 x 0.10 mm
(0.022 x 0.095 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Product Description
The TriQuint TGF2022-48 is a discrete
4.8 mm pHEMT which operates from
DC-20 GHz. The TGF2022-48 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2022-48 typically provides
> 37 dBm of saturated output power with
power gain of 13 dB. The maximum
power added efficiency is 58% which
makes the TGF2022-48 appropriate for
high efficiency applications.
The TGF2022-48 is also ideally suited for
Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2022-48 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
相關(guān)PDF資料
PDF描述
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
TGF2022-60 功能描述:射頻GaAs晶體管 DC-20GHz 6.0mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-01 功能描述:射頻GaAs晶體管 1.25mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-02 功能描述:射頻GaAs晶體管 2.5mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-05 功能描述:射頻GaAs晶體管 5.0mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
TGF2023-10 功能描述:射頻GaAs晶體管 10mm GaN Discrete RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體:
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