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參數(shù)資料
| 型號(hào)： | TGF2021-12 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類(lèi)： | 衰減器 |
| 英文描述： | DC - 12 GHz Discrete power pHEMT |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.57 X 2.93 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-18 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大?。?/td> | 155K |
| 代理商： | TGF2021-12 |
Advance Product Information
September 19, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
1
DC - 12 GHz Discrete power pHEMT TGF2021-12
Key Features and Performance
Frequency Range: DC - 12 GHz
> 42 dBm Nominal Psat
58% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
12mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 900-1500mA
(U
nder RF Drive, Id rises from 900mA to 2560mA)
Chip Dimensions: 0.57 x 2.93 x 0.10 mm
(0.022 x 0.115 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Product Description
The TriQuint TGF2021-12 is a discrete 12
mm pHEMT which operates from DC-12
GHz. The TGF2021-12 is designed using
TriQuint’s proven standard 0.35um power
pHEMT production process.
The TGF2021-12 typically provides
42 dBm of saturated output power with
power gain of 11 dB. The maximum power
added efficiency is 59% which makes the
TGF2021-12 appropriate for high efficiency
applications.
The TGF2021-12 is also ideally suited for
Point-to-point Radio, High-reliability space,
and Military applications.
The TGF2021-has a protective surface
passivation layer providing environmental
robustness.
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
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35
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Frequency (GHz)
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MAG
MSG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF2022-06 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-12 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-24 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-48 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-60 | DC - 20 GHz Discrete power pHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF2022-06 | 功能描述:射頻GaAs晶體管 DC-20GHz 0.6mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-12 | 功能描述:射頻GaAs晶體管 DC-20GHz 1.2mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-24 | 功能描述:射頻GaAs晶體管 DC-20GHz 2.4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-48 | 功能描述:射頻GaAs晶體管 DC-20GHz 4.8mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-60 | 功能描述:射頻GaAs晶體管 DC-20GHz 6.0mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類(lèi)型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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