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參數(shù)資料
| 型號(hào)： | TGF2021-12 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | DC - 12 GHz Discrete power pHEMT |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND HIGH POWER AMPLIFIER |
| 封裝： | 0.57 X 2.93 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-18 |
| 文件頁(yè)數(shù)： | 3/8頁(yè) |
| 文件大小： | 155K |
| 代理商： | TGF2021-12 |
Advance Product Information
September 19, 2005
TGF2021-12
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
3
TABLE III
RF CHARACTERIZATION TABLE
1/
(T
A
= 25
°
C, Nominal)
SYMBOL
PARAMETER
Vd = 10V
Idq = 900mA
Vd = 12V
Idq = 900mA
UNITS
Power Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/, 4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
41.5
49
11
2.09
5.861
0.949
∠
177.7
42
47
11
2.86
5.787
0.947
∠
176.7
dBm
%
dB
pF
-
Efficiency Tuned:
Psat
PAE
Gain
Rp 2/
Cp 2/
Γ
L
3/, 4/
Saturated Output Power
Power Added Efficiency
Power Gain
Parallel Resistance
Parallel Capacitance
Load Reflection coefficient
41
58
11.5
3.65
6.484
0.956
∠
176.1
41.8
52
11
4.06
6.223
0.852
∠
165.7
dBm
%
dB
pF
-
1/ Values in this table are scaled from measurements taken from a 1.5mm unit pHEMT cell at 10 GHz
2/ Large signal equivalent pHEMT output network
3/ Optimum load impedance for maximum power or maximum PAE at 10 GHz
4/ The reflection coefficients for this device have been calculated from the scaled large signal Rp & Cp.
The series resistance and inductance (Rd and Ld) shown in the Figure on page 4 is excluded
TABLE IV
THERMAL INFORMATION
Parameter
Test Conditions
T
CH
(
o
C)
T
JC
(
q
C/W)
T
M
(HRS)
θ
JC
Thermal Resistance
(channel to backside of carrier)
Vd = 10 V
Idq = 900 mA
Pdiss = 8.96 W
142
8.3
2E+6
Note: Assumes eutectic attach using 1.5 mil 80/20 AuSn mounted to a 20 mil CuMo
Carrier at 70
°
C baseplate temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF2022-06 | 功能描述:射頻GaAs晶體管 DC-20GHz 0.6mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-12 | 功能描述:射頻GaAs晶體管 DC-20GHz 1.2mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-24 | 功能描述:射頻GaAs晶體管 DC-20GHz 2.4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-48 | 功能描述:射頻GaAs晶體管 DC-20GHz 4.8mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2022-60 | 功能描述:射頻GaAs晶體管 DC-20GHz 6.0mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
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