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參數(shù)資料
| 型號： | TGF2021-01 |
| 廠商： | TRIQUINT SEMICONDUCTOR INC |
| 元件分類： | 衰減器 |
| 英文描述： | DC-12 GHz Discrete Power pHEMT |
| 中文描述： | 0 MHz - 12000 MHz RF/MICROWAVE WIDE BAND MEDIUM POWER AMPLIFIER |
| 封裝： | 0.57 X 0.53 MM, 0.10 MM HEIGHT, ROHS COMPLIANT, CHIP-2 |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 166K |
| 代理商： | TGF2021-01 |
Advance Product Information
June 8, 2005
TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com
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DC - 12 GHz Discrete power pHEMT TGF2021-01
Key Features and Performance
Frequency Range: DC - 12 GHz
> 30 dBm Nominal Psat
59% Maximum PAE
11 dB Nominal Power Gain
Suitable for high reliability applications
1mm x 0.35 m Power pHEMT
Nominal Bias Vd = 8-12V, Idq = 75-125mA
(U
nder RF Drive, Id rises from 75mA to 240mA)
Chip Dimensions: 0.57 x 0.53 x 0.10 mm
(0.022 x 0.021 x 0.004 in)
Primary Applications
Point-to-point Radio
High-reliability space
Military
Base Stations
Broadband Wireless Applications
Product Description
The TriQuint TGF2021-01 is a discrete
1 mm pHEMT which operates from
DC-12 GHz. The TGF2021-01 is
designed using TriQuint’s proven
standard 0.35um power pHEMT
production process.
The TGF2021-01 typically provides
> 30 dBm of saturated output power
with power gain of 11 dB. The
maximum power added efficiency is
59% which makes the TGF2021-01
appropriate for high efficiency
applications.
The TGF2021-01 is also ideally suited
for Point-to-point Radio, High-reliability
space, and Military applications.
The TGF2021-01 has a protective
surface passivation layer providing
environmental robustness.
Lead-free and RoHS compliant
Note: This device is early in the characterization process prior to finalizing all electrical specifications. Specifications are subject to
change without notice.
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Frequency (GHz)
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MAG
MSG
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| TGF2021-02 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-04 | DC - 12 GHz Discrete power pHEMT |
| TGF2021-12 | DC - 12 GHz Discrete power pHEMT |
| TGF2022-06 | DC - 20 GHz Discrete power pHEMT |
| TGF2022-12 | DC - 20 GHz Discrete power pHEMT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| TGF2021-02 | 功能描述:射頻GaAs晶體管 DC-12GHz 2mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2021-04 | 功能描述:射頻GaAs晶體管 DC-12GHz 4mm Pwr pHEMT (0.35um) RoHS:否 制造商:TriQuint Semiconductor 技術(shù)類型:pHEMT 頻率:500 MHz to 3 GHz 增益:10 dB 噪聲系數(shù): 正向跨導(dǎo) gFS（最大值/最小值）:4 S 漏源電壓 VDS: 閘/源擊穿電壓:- 8 V 漏極連續(xù)電流:3 A 最大工作溫度:+ 150 C 功率耗散:10 W 安裝風(fēng)格: 封裝 / 箱體: |
| TGF2021-04-SD | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT 制造商:TriQuint Semiconductor 功能描述:Trans JFET N-CH 1.8A 4-Pin(3+Tab) SOT-89 Bulk |
| TGF2021-04-SD T/R | 功能描述:功率放大器 DC-4GHz 5Volts RoHS:否 制造商:TriQuint Semiconductor 封裝 / 箱體: 工作電源電壓:28 V 電源電流:2.5 A 工作溫度范圍: 封裝: |
| TGF2021-04-SDT | 制造商:TriQuint Semiconductor 功能描述:RF POWER TRANSISTOR PHEMT |
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