參數(shù)資料
型號: SUP60N10-16L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 100-V (D-S) 175 Degree Celcious MOSFET
中文描述: N溝道100 -五(副)175度Celcious MOSFET的
文件頁數(shù): 2/5頁
文件大?。?/td> 41K
代理商: SUP60N10-16L
SUP60N10-16L
Vishay Siliconix
www.vishay.com
2
Document Number: 71928
S-03600—Rev. B, 31-Mar-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
100
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 80 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 80 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 80 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
100
A
V
GS
= 10 V, I
D
= 30 A
0.0125
0.016
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 4.5 V, I
D
=
20 A
0.014
0.018
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.030
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.040
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
25
S
Dynamic
b
Input Capacitance
C
iss
3820
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
450
pF
Reverse Transfer Capacitance
C
rss
210
Total Gate Charge
c
Q
g
73
110
Gate-Source Charge
c
Q
gs
V
= 50 V,
V
= 10 V, I
= 60 A
DS
GS
15
nC
Gate-Drain Charge
c
Q
gd
D
20
Gate Resistance
R
G
1.5
Turn-On Delay Time
c
t
d(on)
12
25
Rise Time
c
t
r
V
= 50 V, R
= 0.83
60 A, V
GEN
= 10 V, R
G
= 2.5
90
135
ns
Turn-Off Delay Time
c
t
d(off)
I
D
55
85
Fall Time
c
t
f
130
195
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
S
60
A
Pulsed Current
I
SM
100
Forward Voltage
a
V
SD
I
F
= 60 A, V
GS
= 0 V
1.0
1.5
V
Reverse Recovery Time
t
rr
62
100
ns
Peak Reverse Recovery Current
I
RM(REC)
I
= 50 A, di/dt = 100 A/ s
F
3.1
5
A
Reverse Recovery Charge
Q
rr
0.10
0.25
C
Notes
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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