參數(shù)資料
型號(hào): SUM85N03-07P
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 30-V (D-S) 175C MOSFET
中文描述: N溝道30 V的(副)175C MOSFET的
文件頁數(shù): 4/5頁
文件大?。?/td> 49K
代理商: SUM85N03-07P
SUM85N03-07P
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 72036
S-03919—Rev. A, 19-May-03
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0.0
0.4
0.8
1.2
1.6
2.0
-50
-25
0
25
50
75
100
125
150
175
On-Resistance vs. Junction Temperature
Source-Drain Diode Forward Voltage
T
J
- Junction Temperature ( C)
V
SD
- Source-to-Drain Voltage (V)
-
I
S
100
10
1
0.3
0.6
0.9
1.2
1.5
V
GS
= 10 V
I
D
T
J
= 25 C
T
J
= 150 C
(
-
r
D
)
0
0
20
40
60
80
100
0
25
50
75
100
125
150
175
Drain-Source Voltage Breakdown
vs. Junction Temperature
T
J
- Junction Temperature ( C)
V
(
(
相關(guān)PDF資料
PDF描述
SUP40N10-30 N-Channel 100-V (D-S) 175 °C MOSFET
SUP60N06 30V N-Channel PowerTrench MOSFET
SUP60N6-18 Low Current Operation at 250 ,Low Reverse Leakage,Low Noise Zener Diode
SUB60N06-18 30V N-Channel PowerTrench MOSFET
SUP60N06-18 30V N-Channel PowerTrench MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SUM85N03-07P-E3 功能描述:MOSFET 30V 85A 93W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUM85N03-07P-T1-E3 制造商:Vishay Intertechnologies 功能描述:N CHANNEL MOSFET, 30V, 85A, Transistor Polarity:N Channel, Continuous Drain Curr
SUM85N03-08P 制造商:Vishay Siliconix 功能描述:MOSFET N D2-PAK
SUM85N03-08P-E3 功能描述:MOSFET 30V 85A 100W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SUM85N15-19 功能描述:MOSFET 150V 85A 375W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube