參數(shù)資料
型號(hào)： SUB60N06-18
廠商： Vishay Intertechnology,Inc.
元件分類(lèi)： MOSFETs
英文描述： 30V N-Channel PowerTrench MOSFET
中文描述： 30V的N溝道的PowerTrench MOSFET的
文件頁(yè)數(shù)： 1/4頁(yè)
文件大小： 72K
代理商： SUB60N06-18
SUP/SUB60N06-18
Vishay Siliconix
Document Number: 70290
S–57253—Rev. D, 24-Feb-98
www.vishay.com FaxBack 408-970-5600
2-1
N-Channel 60-V (D-S), 175 C MOSFET
V
(BR)DSS
(V)
r
DS(on)
( )
I
D
(A)
60
0.018
60
D
G
S
N-Channel MOSFET
SUP60N06-18
SUB60N06-18
DRAIN connected to TAB
TO-220AB
Top View
G D S
TO-263
S
G
Top View
D
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 175 C)
T
C
= 25 C
I
D
60
A
T
C
= 100 C
39
Pulsed Drain Current
I
DM
120
Avalanche Current
I
AR
60
Repetitive Avalanche Energy
a
L = 0.1 mH
E
AR
180
mJ
Power Dissipation
T
C
= 25 C (TO-220AB and TO-263)
P
D
120
b
W
T
A
= 25 C (TO-263)
c
3.7
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Limit
Unit
Junction to Ambient
Junction-to-Ambient
PCB Mount (TO-263)
c
R
thJA
40
C/W
Free Air (TO-220AB)
62.5
Junction-to-Case
R
thJC
1.25
Notes:
a.
b.
c.
For SPICE model information via the Worldwide Web: http://www.vishay.com/www/product/spice.htm
Duty cycle
See SOA curve for voltage derating.
When mounted on 1” square PCB (FR-4 material).
1%.
相關(guān)PDF資料
PDF描述
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