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參數(shù)資料
| 型號： | SUB60N06-18 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | 30V N-Channel PowerTrench MOSFET |
| 中文描述： | 30V的N溝道的PowerTrench MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 72K |
| 代理商： | SUB60N06-18 |
SUP/SUB60N06-18
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70290
S–57253—Rev. D, 24-Feb-98
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
60
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
DS
= 1 mA
2.0
4.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
A
V
DS
= 60 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 60 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
a
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
60
A
D i S
Drain-Source On-State Resistance
O S
a
V
GS
= 10 V, I
D
= 30 A
0.014
0.018
r
DS(on)
V
GS
= 10 V, I
D
= 30 A, T
J
= 125 C
0.024
0.030
V
GS
= 10 V, I
D
= 30 A, T
J
= 175 C
0.031
0.036
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 30 A
49
S
Dynamic
b
Input Capacitance
C
iss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
0 V V
25 V f
2000
Output Capacitance
C
oss
400
pF
Reversen Transfer Capacitance
C
rss
115
Total Gate Charge
c
Q
g
V
DS
= 30 V V
V
GS
= 10 V, I
D
= 60 A
10 V I
39
60
Gate-Source Charge
c
Q
gs
12
nC
Gate-Drain Charge
c
Q
gd
10
Turn-On Delay Time
c
t
d(on)
12
30
Rise Time
c
t
r
V
= 30 V, R
= 0.5
DD
60 A, V
GEN
= 10 V, R
G
= 2.5
11
30
ns
Turn-Off Delay Time
c
t
d(off)
L
I
D
25
50
Fall Time
c
t
f
15
30
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
b
Continuous Current
I
s
60
A
Pulsed Current
I
SM
120
Forward Voltage
a
V
SD
I
F
= 60 A, V
GS
= 0 V
1.6
V
Reverse Recovery Time
t
rr
I
F
= 60 A di/d
100 A/
60
ns
Peak Reverse Recovery Current
I
RM(REC)
6.0
A
Reverse Recovery Charge
Q
rr
0.4
C
Notes:
a.
b.
c.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
Independent of operating temperature.
300 s, duty cycle
2%.
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