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參數(shù)資料
| 型號(hào)： | SUM85N03-07P |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S) 175C MOSFET |
| 中文描述： | N溝道30 V的（副）175C MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 49K |
| 代理商： | SUM85N03-07P |
SUM85N03-07P
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72036
S-03919—Rev. A, 19-May-03
SPECIFICATIONS (T
J
=25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
DS
= 0 V, I
D
= 250 A
30
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1
3.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 24 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10 V
120
A
V
GS
= 10 V, I
D
= 20 A
0.0054
0.007
Drain Source On State Resistance
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10 V, I
D
= 20 A, T
J
= 125 C
0.010
V
GS
= 10 V, I
D
= 20 A, T
J
= 175 C
0.012
V
GS
= 4.5 V, I
D
=
20 A
0.0077
0.010
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 20 A
20
S
Dynamic
b
Input Capacitance
C
iss
2900
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
530
pF
Reverse Transfer Capacitance
C
rss
235
Gate-Resistance
R
G
1.9
Total Gate Charge
b
Q
g
20
30
Gate-Source Charge
b
Q
gs
V
= 15 V,
V
= 4.5V, I
= 50 A
DS
GS
9
nC
Gate-Drain Charge
b
Q
gd
D
7
Turn-On Delay Time
b
t
d(on)
13
20
Rise Time
b
t
r
V
= 15 V, R
= 0.3
50 A, V
GEN
= 10 V, R
G
= 2.5
9
15
ns
Turn-Off Delay Time
b
t
d(off)
I
D
30
45
Fall Time
b
t
f
8
15
Source-Drain Diode Ratings and Characteristics (T
C
= 25 C)
c
Continuous Current
I
S
85
A
Pulsed Current
I
SM
200
Forward Voltage
a
V
SD
I
F
= 30 A, V
GS
= 0 V
1.2
1.5
V
Reverse Recovery Time
t
rr
I
F
= 50 A, di/dt = 100 A/ s
35
70
ns
Notes
a.
b.
c.
Pulse test; pulse width
Independent of operating temperature.
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
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| SUM85N03-07P-E3 | 功能描述:MOSFET 30V 85A 93W 7.0mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| SUM85N03-08P-E3 | 功能描述:MOSFET 30V 85A 100W 7.5mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUM85N15-19 | 功能描述:MOSFET 150V 85A 375W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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