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參數(shù)資料
| 型號： | SUD50N03-10 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C MOSFET |
| 中文描述： | N溝道30 V的（副），175葷MOSFET的 |
| 文件頁數(shù)： | 3/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | SUD50N03-10 |
SUD50N03-07
Vishay Siliconix
Document Number: 70767
S-40272—Rev. E, 23-Feb-04
www.vishay.com
3
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
50
100
150
200
250
0
2
4
6
8
10
0
4
8
12
16
20
0
30
60
90
120
0.0000
0.0025
0.0050
0.0075
0.0100
0.0125
0.0150
0
20
40
60
80
100
0
20
40
60
80
100
0
1
2
3
4
5
0
30
60
90
120
0
10
20
30
40
50
0
2000
4000
6000
8000
0
5
10
15
20
25
30
Output Characteristics
Transfer Characteristics
Capacitance
Gate Charge
Transconductance
On-Resistance vs. Drain Current
V
DS
Drain-to-Source Voltage (V)
I
V
GS
Gate-to-Source Voltage (V)
I
V
r
Q
g
Total Gate Charge (nC)
I
D
Drain Current (A)
V
DS
Drain-to-Source Voltage (V)
C
)
g
25 C
55 C
5 V
T
C
= 125 C
V
DS
= 15 V
I
D
= 45 A
V
GS
= 10, 9, 8, 7, 6 V
V
GS
= 10 V
V
GS
= 4.5 V
C
rss
T
C
=
55 C
25 C
125 C
3 V
C
iss
I
D
Drain Current (A)
4 V
相關PDF資料 |
PDF描述 |
|---|---|
| SUD50N03-11 | Low Side Reverse Polarity protection; |
| SUD50N03-09P | N-Channel MOSFET, 30 V(D-S) |
| SUD50N03-09P-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUD50N03-12P | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUD50N03-16P | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N03-10AP | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-10AP-E3 | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-10BP | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-10BP | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUD50N03-10BP-E3 | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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