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參數(shù)資料
| 型號(hào)： | SUD50N03-10 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175C MOSFET |
| 中文描述： | N溝道30 V的（副），175葷M(mǎn)OSFET的 |
| 文件頁(yè)數(shù)： | 1/4頁(yè) |
| 文件大?。?/td> | 60K |
| 代理商： | SUD50N03-10 |
FEATURES
TrenchFET Power MOSFET
175 C Maximum Junction Temperature
100% R
g
Tested
SUD50N03-07
Vishay Siliconix
Document Number: 70767
S-40272—Rev. E, 23-Feb-04
www.vishay.com
1
N-Channel 30-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.007 @ V
GS
= 10 V
20
0.010 @ V
GS
= 4.5 V
16
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information:
SUD50N03-07
SUD50N03-07—E3 ( Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
A
= 25 C
I
D
20
T
A
= 100 C
14
A
Pulsed Drain Current
I
DM
100
Continuous Source Current (Diode Conduction)
a
I
S
20
Maximum Power Dissipation
T
C
= 25 C
P
D
136
W
T
A
= 25 C
5
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
R
thJA
30
C/W
Maximum Junction-to-Case
R
thJC
0.85
1.1
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
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PDF描述 |
|---|---|
| SUD50N03-11 | Low Side Reverse Polarity protection; |
| SUD50N03-09P | N-Channel MOSFET, 30 V(D-S) |
| SUD50N03-09P-E3 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUD50N03-12P | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SUD50N03-16P | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD50N03-10AP | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-10AP-E3 | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-10BP | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD50N03-10BP | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUD50N03-10BP-E3 | 功能描述:MOSFET 30V 20A 71W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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