參數(shù)資料
型號: SUD50N03-11
廠商: Vishay Intertechnology,Inc.
英文描述: Low Side Reverse Polarity protection;
中文描述: 低側(cè)反接保護;
文件頁數(shù): 1/4頁
文件大?。?/td> 60K
代理商: SUD50N03-11
FEATURES
TrenchFET Power MOSFET
175 C Maximum Junction Temperature
100% R
g
Tested
SUD50N03-07
Vishay Siliconix
Document Number: 70767
S-40272—Rev. E, 23-Feb-04
www.vishay.com
1
N-Channel 30-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
30
0.007 @ V
GS
= 10 V
20
0.010 @ V
GS
= 4.5 V
16
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information:
SUD50N03-07
SUD50N03-07—E3 ( Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
30
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
a
T
A
= 25 C
I
D
20
T
A
= 100 C
14
A
Pulsed Drain Current
I
DM
100
Continuous Source Current (Diode Conduction)
a
I
S
20
Maximum Power Dissipation
T
C
= 25 C
P
D
136
W
T
A
= 25 C
5
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
a
R
thJA
30
C/W
Maximum Junction-to-Case
R
thJC
0.85
1.1
Notes
a.
Surface Mounted on FR4 Board, t
10 sec.
相關(guān)PDF資料
PDF描述
SUD50N03-09P N-Channel MOSFET, 30 V(D-S)
SUD50N03-09P-E3 Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SUD50N03-12P Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SUD50N03-16P Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode
SUD50N04-06H N-Channel 40-V (D-S), 175∩ MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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