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參數(shù)資料
| 型號： | SUD30N03-30 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET |
| 中文描述： | N溝道30 V的（副），175 DegreeCelcious MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 65K |
| 代理商： | SUD30N03-30 |
SUD30N03-30
Vishay Siliconix
www.vishay.com FaxBack 408-970-5600
2-2
Document Number: 70268
S-57253—Rev. D, 24-Feb-98
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
30
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
V l
D i C
I
DSS
V
DS
= 30 V, V
GS
= 0 V
1
A
V
DS
= 30 V, V
GS
= 0 V, T
J
= 125 C
50
V
DS
= 30 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
30
A
D i S
Drain-Source On-State Resistance
O S
b
V
GS
= 10 V, I
D
= 15 A
0.020
0.030
r
DS(on)
V
GS
= 10 V, I
D
= 15 A, T
J
= 125 C
0.033
0.050
V
GS
= 10 V, I
D
= 15 A, T
J
= 175 C
0.036
0.054
V
GS
= 4.5 V, I
D
= 12.5 A
0.030
0.045
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 15 A
10
22
S
Dynamic
a
Input Capacitance
C
iss
1170
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
320
pF
Reverse Transfer Capacitance
C
rss
60
Total Gate Charge
c
Q
g
V
DS
= 15 V V
V
GS
= 10 V, I
D
= 30 A
10 V I
18
35
Gate-Source Charge
c
Q
gs
5.5
nC
Gate-Drain Charge
c
Q
gd
2
Turn-On Delay Time
c
t
d(on)
V
= 15 ,
= 0 5
30 A V
30 A, V
GEN
= 10 V, R
G
= 7.5
10
20
Rise Time
c
t
r
I
D
10 V R
7 5
10
20
ns
Turn-Off Delay Time
c
t
d(off)
25
40
Fall Time
c
t
f
15
30
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
40
A
Diode Forward Voltage
b
V
SD
I
F
= 30 A, V
GS
= 0 V
1.1
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 30 A, di/dt = 100 A/ s
50
100
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD30N03-30 | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
| SUD30N03-30-E3 | 功能描述:MOSFET 30V 30A 50W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD30N03-30-T4 | 制造商:Vishay Angstrohm 功能描述:Trans MOSFET N-CH 30V 30A 3-Pin(2+Tab) DPAK T/R |
| SUD30N04-10 | 功能描述:MOSFET 40V 30A 97W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD30N04-10-E3 | 功能描述:MOSFET 40V 30A 97W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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