參數(shù)資料
型號(hào): SUD35N05-26L
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 55-V (D-S) 175 C MOSFET
中文描述: N通道55 - V(下副秘書長)175葷MOSFET的
文件頁數(shù): 1/4頁
文件大?。?/td> 38K
代理商: SUD35N05-26L
TrenchFET Power MOSFETS
175 C Rated Maximum Junction Temperature
Low Input Capacitance
Automotive Fuel Injection Systems
Automotive Wipers
Automotive Door Modules
SUD35N05-26L
Vishay Siliconix
New Product
Document Number: 71443
S-03485—Rev. A,16-Apr-01
www.vishay.com
1
N-Channel 55-V (D-S) 175 C MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
a
0.020 @ V
GS
= 10 V
35
55
0.026 @ V
GS
= 4.5 V
30
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD35N05-26L
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
55
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
35
Continuous Drain Current (T
J
= 175 C)
b
T
C
= 100 C
I
D
25
Pulsed Drain Current
I
DM
80
A
Continuous Source Current (Diode Conduction)
a
I
S
35
T
C
= 25 C
50
c
Maximum Power Dissipation
T
A
= 25 C
P
D
7.5
b
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
17
20
Junction-to-Ambient
b
Steady State
R
thJA
50
60
Junction-to-Case
R
thJC
2.5
3.0
C/W
Junction-to-Lead
R
thJL
5.0
6.0
Notes
a.
b.
c.
Package Limited.
Surface Mounted on 1” x1” FR4 Board, t
See SOA curve for voltage derating.
10 sec.
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