參數(shù)資料
型號: SUD25N04-25
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 40-V (D-S) 175C MOSFET
中文描述: N通道40 - V(下局副局長)175C MOSFET的
文件頁數(shù): 2/4頁
文件大?。?/td> 42K
代理商: SUD25N04-25
SUD25N04-25
Vishay Siliconix
www.vishay.com
2-2
Document Number: 71129
S-04558
Rev. B, 27-Aug-01
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
40
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
1.0
2.0
3.0
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 40 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 40 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 40 V, V
GS
= 0 V, T
J
= 175 C
150
On-State Drain Current
b
I
D(on)
V
DS
= 5 V, V
GS
= 10 V
50
A
V
GS
= 10 V, I
D
= 25 A
0.02
0.025
V
GS
= 10 V, I
D
= 25 A, T
J
= 125 C
0.040
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 25 A, T
J
= 175 C
0.053
V
GS
= 4.5 V, I
D
= 10 A
0.031
0.040
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 25 A
15
S
Dynamic
a
Input Capacitance
C
iss
510
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, F = 1 MHz
125
pF
Reverse Transfer Capacitance
C
rss
65
Total Gate Charge
c
Q
g
13
20
Gate-Source Charge
c
Q
gs
V
= 20 V,
V
= 10 V, I
= 25 A
DS
GS
2.5
nC
Gate-Drain Charge
c
Q
gd
D
3
Turn-On Delay Time
c
t
d(on)
5
10
Rise Time
c
t
r
V
= 20 V, R
= 0.8
25 A, V
GEN
= 10 V, R
G
= 2.5
47
70
Turn-Off Delay Time
c
t
d(off)
I
D
15
30
ns
Fall Time
c
t
f
5
10
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
50
A
Diode Forward Voltage
b
V
SD
I
F
= 25 A, V
GS
= 0 V
1.1
1.3
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 25 A, di/dt = 100 A/ s
17
30
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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