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參數(shù)資料
| 型號： | SUD25N15-52-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 150-V (D-S) 175C MOSFET |
| 中文描述： | N溝道150 -五（副）175C MOSFET的 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 60K |
| 代理商： | SUD25N15-52-E3 |
FEATURES
TrenchFET Power MOSFET
175 C Junction Temperature
PWM Optimized
100% R
g
Tested
APPLICATIONS
Primary Side Switch
SUD25N15-52
Vishay Siliconix
Document Number: 71768
S-40272—Rev. C, 23-Feb-04
www.vishay.com
1
N-Channel 150-V (D-S) 175 C MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
150
0.052 @ V
GS
= 10 V
25
0.060 @ V
GS
= 6 V
23
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Ordering Information:
SUD25N15-52
SUD25N15-52—E3 (Lead Free)
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
150
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current (T
J
= 175 C)
b
T
C
= 25 C
I
D
25
T
C
= 125 C
14.5
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
I
S
25
Avalanche Current
I
AR
25
Repetitive Avalanche Energy (Duty Cycle
1%)
L = 0.1 mH
E
AR
31
mJ
Maximum Power Dissipation
T
C
= 25 C
P
D
136
b
W
T
A
= 25 C
3
a
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 175
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
15
18
Steady State
40
50
C/W
Junction-to-Case (Drain)
R
thJC
0.85
1.1
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
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| SUD30N03-30 | N-Channel 30-V (D-S), 175 DegreeCelcious MOSFET |
| SUD35N05-26L | N-Channel 55-V (D-S) 175 C MOSFET |
| SUD40N02-08 | N-Channel 20-V (D-S), 175C MOSFET |
| SUD40N03-18P | N-Channel 30-V (D-S) 175C MOSFET |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD25N15-52-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SUD25N15-52-E3/BKN | 制造商:Vishay Siliconix 功能描述:N-Channel 150-V (D-S) 175C DEG MOSFET |
| SUD25N15-52-T4-E3 | 功能描述:MOSFET N-CH D-S 150V TO252 RoHS:是 類別:分離式半導體產(chǎn)品 >> FET - 單 系列:TrenchFET® 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| SUD30N03-30 | 功能描述:MOSFET 30V 30A 50W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD30N03-30 | 制造商:Vishay Siliconix 功能描述:MOSFET N D-PAK |
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