參數(shù)資料
型號(hào): SUD25N04-25
廠商: Vishay Intertechnology,Inc.
英文描述: N-Channel 40-V (D-S) 175C MOSFET
中文描述: N通道40 - V(下局副局長(zhǎng))175C MOSFET的
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 42K
代理商: SUD25N04-25
SUD25N04-25
Vishay Siliconix
Document Number: 71129
S-04558—Rev. B, 27-Aug-01
www.vishay.com
2-1
N-Channel 40-V (D-S) 175 C MOSFET
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.025 @ V
GS
= 10 V
25
40
0.040 @ V
GS
= 4.5 V
20
D
G
S
N-Channel MOSFET
TO-252
S
G
D
Top View
Drain Connected to Tab
Order Number:
SUD25N04-25
Parameter
Symbol
Limit
Unit
Drain-Source Voltage
V
DS
40
Gate-Source Voltage
V
GS
20
V
T
C
= 25 C
25
Continuous Drain Current (T
J
= 175 C)
b
T
C
= 125 C
I
D
15
Pulsed Drain Current
I
DM
50
A
Continuous Source Current (Diode Conduction)
b
I
S
50
Avalanche Current
I
AR
25
Repetitive Avalanche Energy (Duty Cycle
1%)
L = 0.1 mH
E
AR
31
mJ
T
C
= 25 C
33
b
Maximum Power Dissipation
T
A
= 25 C
P
D
3
b
W
Operating Junction and Storage Temperature Range
T
J
, T
stg
–55 to 175
C
Parameter
Symbol
Typical
Maximum
Unit
t
10 sec
20
25
Junction-to-Ambient
b
Steady State
R
thJA
40
50
C/W
Junction-to-Case
R
thJC
3.7
4.5
Notes
a.
b.
Surface Mounted on 1” x1” FR4 Board.
See SOA curve for voltage derating.
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