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參數(shù)資料
| 型號(hào)： | SUD17N25-165 |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | N-Channel 250-V (D-S) 175C MOSFET |
| 中文描述： | N溝道250 -五（副）175C MOSFET的 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 51K |
| 代理商： | SUD17N25-165 |
SUD17N25-165
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 72851
S-40578—Rev. A, 29-Mar-04
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
a
Max
Unit
Static
Drain-Source Breakdown Voltage
V
(BR)DSS
V
GS
= 0 V, I
D
= 250 A
250
V
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
2.5
4.0
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
V
DS
= 250 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 250 V, V
GS
= 0 V, T
J
= 125 C
50
A
V
DS
= 250 V, V
GS
= 0 V, T
J
= 175 C
250
On-State Drain Current
b
I
D(on)
V
DS
= 15 V, V
GS
= 10 V
17
A
V
GS
= 10 V, I
D
= 14 A
0.131
0.165
Drain-Source On-State Resistance
b
r
DS(on)
V
GS
= 10 V, I
D
= 14 A, T
J
= 125 C
0.347
V
GS
= 10 V, I
D
= 14 A, T
J
= 175 C
0.462
Forward Transconductance
b
g
fs
V
DS
= 15 V, I
D
= 17 A
36
S
Dynamic
a
Input Capacitance
C
iss
1950
Output Capacitance
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz
160
pF
Reverse Transfer Capacitance
C
rss
70
Total Gate Charge
c
Q
g
30
42
Gate-Source Charge
c
Q
gs
V
= 125 V,
V
= 10 V, I
= 17 A
DS
GS
10
nC
Gate-Drain Charge
c
Q
gd
D
10
Gate Resistance
R
g
1.6
Turn-On Delay Time
c
t
d(on)
15
25
Rise Time
c
t
r
V
= 125 V, R
= 7.35
17 A, V
GEN
= 10 V, R
g
= 2.5
130
195
ns
Turn-Off Delay Time
c
t
d(off)
I
D
30
45
Fall Time
c
t
f
100
150
Source-Drain Diode Ratings and Characteristic (T
C
= 25 C)
Pulsed Current
I
SM
20
A
Diode Forward Voltage
b
V
SD
I
F
= 17 A, V
GS
= 0 V
0.9
1.5
V
Source-Drain Reverse Recovery Time
t
rr
I
F
= 17 A, di/dt = 100 A/ s
115
175
ns
Notes
a.
b.
c.
Guaranteed by design, not subject to production testing.
Pulse test; pulse width
300 s, duty cycle
2%.
Independent of operating temperature.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SUD17N25-165_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 250-V (D-S) 175 °C MOSFET |
| SUD17N25-165_11 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 250 V (D-S) 175 Celsius MOSFET |
| SUD17N25-165-E3 | 功能描述:MOSFET N-CH 250V 17A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD19N20-90 | 功能描述:MOSFET 200V 17.5A 100W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SUD19N20-90_08 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 200-V (D-S) 175 °C MOSFET |
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