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參數(shù)資料
| 型號： | STW4N150 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET |
| 中文描述： | N溝道1500V的- 5 -第4A TO-220/TO-247高電壓MOSFET的PowerMESH |
| 文件頁數(shù)： | 3/11頁 |
| 文件大?。?/td> | 310K |
| 代理商： | STW4N150 |
3/11
STP4N150 - STW4N150
ELECTRICAL CHARACTERISTICS
(CONTINUED)
Table 7: Dynamic
Symbol
Parameter
g
fs
(1)
Forward Transconductance
C
iss
C
oss
C
rss
Reverse Transfer Capacitance
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Gate-Drain Charge
Table 8: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
Test Conditions
V
DS
= 30 V , I
D
= 2 A
V
DS
= 25 V, f = 1 MHz,
V
GS
= 0
Min.
Typ.
3.5
Max.
Unit
S
Input Capacitance
Output Capacitance
1300
120
12
pF
pF
pF
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
V
DD
= 750 V, I
D
= 2 A,
R
G
= 4.7
,
V
GS
= 10 V
(see Figure 19)
35
30
45
45
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
V
DD
= 600 V, I
D
= 4 A,
V
GS
= 10 V
(see Figure 22)
30
10
9
50
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
4
12
Unit
A
A
Source-drain Current
I
SD
= 4 A, V
GS
= 0
I
SD
= 4 A, di/dt = 100 A/μs
V
DD
= 45V
(see Figure 20)
2
V
Reverse Recovery Time
Reverse Recovery Charge
510
3
12
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 4 A, di/dt = 100 A/μs
V
DD
= 45V, T
j
= 150
°
C
(see Figure 20)
650
4
12.6
ns
μC
A
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