- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄380786 > STW4N150 (意法半導(dǎo)體) N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | STW4N150 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET |
| 中文描述： | N溝道1500V的- 5 -第4A TO-220/TO-247高電壓MOSFET的PowerMESH |
| 文件頁(yè)數(shù)： | 2/11頁(yè) |
| 文件大?。?/td> | 310K |
| 代理商： | STW4N150 |
STP4N150 - STW4N150
2/11
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
T
j
T
stg
Storage Temperature
( ) Pulse width limited by safe operating area
(*) Limited only by maximum temperature allowed
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Test Conditions
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating,T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
Parameter
Value
Unit
1500
V
1500
V
± 30
V
4
A
2.5
A
12
A
160
W
1
W/
°
C
Operating Junction Temperature
-55 to 150
°
C
TO-220
TO-247
Rthj-case
Rthj-amb
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.78
°
C/W
°
C/W
62.5
50
Parameter
Max Value
4
Unit
A
350
mJ
Min.
1500
Typ.
Max.
Unit
V
I
D
= 1 mA, V
GS
= 0
V
DS
= Max Rating
10
500
μA
μA
V
GS
= ± 30 V
± 100
nA
3
4
5
V
V
GS
= 10 V, I
D
= 2 A
5
7
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STP4N150 | N-CHANNEL 1500V - 5 - 4A TO-220/TO-247 Very High Voltage PowerMESH MOSFET |
| STW6NA90 | N-Channel Enhancement Mode Fast Power MOS Transistor(N溝道增強(qiáng)模式功率MOS晶體管) |
| STW6NB100 | N - CHANNEL 1000V - 2.3ohm - 5.4A - TO-247 PowerMESH MOSFET |
| STW6NB90 | N - CHANNEL 900V - 1.7ohm - 6.3A - TO-247 PowerMESH MOSFET |
| STW6NC90Z | N-CHANNEL 900V - 2.1ohm - 5.2A TO-247 Zener-Protected PowerMESH⑩III MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW5093 | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:N-CHANNEL 600V - 0.075ohm - 47A TO-247 MDmesh⑩Power MOSFET |
| STW5093CYL | 功能描述:接口—CODEC 14-Bit Linear CODEC RoHS:否 制造商:Texas Instruments 類(lèi)型: 分辨率: 轉(zhuǎn)換速率:48 kSPs 接口類(lèi)型:I2C ADC 數(shù)量:2 DAC 數(shù)量:4 工作電源電壓:1.8 V, 2.1 V, 2.3 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-81 封裝:Reel |
| STW5093CYLT | 功能描述:接口—CODEC 14-Bit Linear CODEC RoHS:否 制造商:Texas Instruments 類(lèi)型: 分辨率: 轉(zhuǎn)換速率:48 kSPs 接口類(lèi)型:I2C ADC 數(shù)量:2 DAC 數(shù)量:4 工作電源電壓:1.8 V, 2.1 V, 2.3 V to 5.5 V 最大工作溫度:+ 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:DSBGA-81 封裝:Reel |
| STW5094 | 功能描述:音頻 DSP 14-Bit Linear CODEC RoHS:否 制造商:Texas Instruments 工作電源電壓: 電源電流: 工作溫度范圍: 安裝風(fēng)格: 封裝 / 箱體: 封裝:Tube |
| STW5094A | 制造商:STMICROELECTRONICS 制造商全稱(chēng):STMicroelectronics 功能描述:18-bit Low Power Asynchronous Stereo Audio DAC with Integrated Power Amplifiers and Voice Codec |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。