- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380760 > STW25NM60N (意法半導體) N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET PDF資料下載
參數(shù)資料
| 型號： | STW25NM60N |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| 中文描述： | N溝道600V的0.140 - 20A型TO-220/FP/DAK/TO-247 MOSFET的第二代MDmesh |
| 文件頁數(shù)： | 2/12頁 |
| 文件大?。?/td> | 273K |
| 代理商： | STW25NM60N |
STP25NM60N - STF25NM60N - STB25NM60N/-1 - STW25NM60N
2/12
Table 3: Absolute Maximum ratings
Symbol
(*) Limited only by maximum temperature allowed
(1) Pulse width limited by safe operating area
(2) I
SD
≤
20 A, di/dt
≤
400 A/μs, V
DD
=80%
V
(BR)DSS
.
Table 4: Thermal Data
Table 5: Avalanche Characteristics
Symbol
I
AS
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AS
, V
DD
= 50 V)
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 6: On /Off
Symbol
Parameter
Test Conditions
(2) Characteristic value at turn off on inductive load
Parameter
Value
Unit
TO-220/I2PAK
TO-247/D2PAK
TO-220FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(1)
P
TOT
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
600
V
600
V
Gate- source Voltage
± 25
V
Drain Current (continuous) at T
C
= 25
°
C
Drain Current (continuous) at T
C
= 100
°
C
20
20 (*)
A
12.8
12.8 (*)
A
Drain Current (pulsed)
80
80 (*)
A
Total Dissipation at T
C
= 25
°
C
Derating Factor
Peak Diode Recovery voltage slope
160
40
W
1.28
0.32
W/
°
C
V/ns
dv/dt (2)
T
stg
T
j
TBD
Storage Temperature
–
55 to 150
°
C
Max. Operating Junction Temperature
150
°
C
TO-220/I2PAK
TO-247/D2PAK
0.78
TO-220FP
Rthj-case
Rthj-amb
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
3.1
°
C/W
°
C/W
62.5
Maximum Lead Temperature For Soldering Purpose
300
°
C
Parameter
Max Value
TBD
Unit
A
TBD
mJ
Value
Typ.
Unit
Min.
600
Max.
V
(BR)DSS
Drain-source Breakdown
Voltage
Drain Source Voltage
Slope
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 1 mA, V
GS
= 0
V
dv/dt(2)
Vdd=TBD, Id=TBD, Vgs=TBD
TBD
V/ns
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating, T
C
= 125
°
C
V
GS
= ± 20 V
1
10
μA
μA
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
100
nA
V
GS(th)
R
DS(on
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
V
GS
= 10 V, I
D
= 10 A
2
3
4
V
Static Drain-source On
Resistance
0.140
0.170
相關PDF資料 |
PDF描述 |
|---|---|
| STB30NF10 | N-CHANNEL 100V - 0.038 ohm - 35A TO-220/TO-220FP/D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| STB3015LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 40A I(D) | TO-263AB |
| STB30NE06LT4 | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB |
| STB30NF10T4 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-263AB |
| STB30NS15T4 | FUSE BLOCK MAXI |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STW25NM60ND | 功能描述:MOSFET N-channel 600V, 21A FDMesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM50 | 功能描述:MOSFET N-Ch 500 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM60 | 功能描述:MOSFET N-Ch 600 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM60N | 功能描述:MOSFET N-channel 600 V Mdmesh II Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM60ND | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 21A TO247 |
發(fā)布緊急采購，3分鐘左右您將得到回復。