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參數(shù)資料
| 型號(hào)： | STB30NE06LT4 |
| 英文描述： | TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 30A I(D) | TO-263AB |
| 中文描述： | 晶體管| MOSFET的| N溝道| 60V的五（巴西）直| 30A條（丁）|對(duì)263AB |
| 文件頁(yè)數(shù)： | 1/11頁(yè) |
| 文件大?。?/td> | 455K |
| 代理商： | STB30NE06LT4 |
1/11
May 2002
.
STB30NF10
STP30NF10 STP30NF10FP
N-CHANNEL 100V - 0.038
- 35A TO-220/TO-220FP/D
2
PAK
LOW GATE CHARGE STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.038
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
APPLICATION ORIENTED
CHARACTERIZATION
I
SURFACE-MOUNTING D
2
PAK (TO-263)
POWER PACKAGE IN TUBE (NO SUFFIX) OR
IN TAPE & REEL (SUFFIX “T4”)
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
HIGH-EFFICIENCY DC-DC CONVERTERS
I
UPS AND MOTOR CONTROL
TYPE
V
DSS
R
DS(on)
I
D
STB30NF10
STP30NF10
STP30NF10FP
100 V
100 V
100 V
<0.045
<0.045
<0.045
35 A
35 A
18 A
TO-220
1
2
3
TO-220FP
1
3
D
2
PAK
TO-263
(Suffix “T4”)
1
2
3
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
30A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 15A, V
DD
= 30V
Parameter
Value
Unit
STB30NF10
STP30NF10
STP30NF10FP
V
DS
V
DGR
V
GS
I
D
I
D
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain-gate Voltage (R
GS
= 20 k
)
Gate- source Voltage
Drain Current (continuous) at T
C
= 25°C
Drain Current (continuous) at T
C
= 100°C
Drain Current (pulsed)
Total Dissipation at T
C
= 25°C
Derating Factor
Peak Diode Recovery voltage slope
Single Pulse Avalanche Energy
Insulation Withstand Voltage (DC)
Storage Temperature
Operating Junction Temperature
100
100
± 20
V
V
V
A
A
A
W
35
25
140
115
0.77
18
13
72
30
0.2
W/°C
V/ns
mJ
V
dv/dt
(1)
E
AS (2)
V
ISO
T
stg
T
j
28
275
------
2000
-55 to 175
°C
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB30NF10T4 | TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 30A I(D) | TO-263AB |
| STB30NS15T4 | FUSE BLOCK MAXI |
| STB30N10 | CAP 22PF 200V 10% NP0(C0G) DIP-2 TUBE-PAK R-MIL-PRF-39014/22 |
| STB30NS15 | N-CHANNEL 150V - 0.075 ohm - 30A D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| STB35NF10 | N-CHANNEL 100V - 0.030ohm - 40A TO-220 / D2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB30NF10 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 100V 35A D2PAK |
| STB30NF10_06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.038ヘ - 35A - D2PAK/TO-220/TO-220FP Low gate charge STripFET⑩ II Power MOSFET |
| STB30NF10T4 | 功能描述:MOSFET N-Ch 100 Volt 35 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB30NF20 | 功能描述:MOSFET N Ch 1500V 2.5A Pwr MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB30NF20L | 功能描述:MOSFET N-Ch 200V 0.065 Ohm 30A STripFET 150W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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