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參數(shù)資料
| 型號： | STW25NM60N |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 600V 0.140-20A TO-220/FP/DAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| 中文描述： | N溝道600V的0.140 - 20A型TO-220/FP/DAK/TO-247 MOSFET的第二代MDmesh |
| 文件頁數(shù)： | 1/12頁 |
| 文件大?。?/td> | 273K |
| 代理商： | STW25NM60N |
1/12
PRODUCT PREVIEW
June 2005
This is preliminary information on a new product now in development. Details are subject to change without notice.
STP25NM60N - STF25NM60N
STB25NM60N/-1 - STW25NM60N
N-CHANNEL 600V 0.140
-20A TO-220/FP/D2/I2PAK/TO-247
SECOND GENERATION MDmesh MOSFET
Table 1: General Features
I
WORLD’S LOWEST ON RESISTANCE
I
TYPICAL R
DS
(on) = 0.140
I
HIGH dv/dt AND AVALANCHE CAPABILITIES
I
100% AVALANCHE TESTED
I
LOW INPUT CAPACITANCE AND GATE
CHARGE
I
LOW GATE INPUT RESISTANCE
DESCRIPTION
The
STP25NM60N
is realized with the second
generation of MDmesh Technology. This revolu-
tionary MOSFET associates a new vertical struc-
ture to the Company's strip layout to yield the
world's lowest on-resistance and gate charge. It is
therefore suitable for the most demanding high ef-
ficiency converters
APPLICATIONS
The MDmesh II family is very suitable for in-
crease the power density of high voltage convert-
ers allowing system miniaturization and higher
efficiencies.
Table 2: Order Code
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
(
@
Tjmax)
R
DS(on)
I
D
STB25NM60N-1
STF25NM60N
STP25NM60N
STW25NM60N
STB25NM60N
650 V
650 V
650 V
650 V
650 V
< 0.170
< 0.170
< 0.170
< 0.170
< 0.170
20 A
20(*) A
20 A
20 A
20 A
TO-247
1
2
3
1
2
3
123
1
2
3
I
2
PAK
TO-220
TO-220FP
1
3
D2PAK
SALES TYPE
MARKING
PACKAGE
PACKAGING
STB25NM60N-1
B25NM60N
I
2
PAK
TUBE
STF25NM60N
F25NM60N
TO-220FP
TUBE
STP25NM60N
P25NM60N
TO-220
TUBE
STW25NM60N
W25NM60N
TO-247
TUBE
STB25NM60N
B25NM60N
D
2
PAK
TAPE & REEL
Rev. 4
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| STW25NM60ND | 功能描述:MOSFET N-channel 600V, 21A FDMesh II RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM50 | 功能描述:MOSFET N-Ch 500 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM60 | 功能描述:MOSFET N-Ch 600 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM60N | 功能描述:MOSFET N-channel 600 V Mdmesh II Power RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW26NM60ND | 制造商:STMicroelectronics 功能描述:MOSFET N-CH 600V 21A TO247 |
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