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參數(shù)資料
| 型號(hào)： | STH10NA50FI |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR |
| 中文描述： | ? -快速通道增強(qiáng)型功率MOS器件 |
| 文件頁(yè)數(shù)： | 3/16頁(yè) |
| 文件大?。?/td> | 255K |
| 代理商： | STH10NA50FI |
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STP10NK60Z/FP, STB10NK60Z, STB10NK60Z-1, STW10NK60Z, STH10NK60ZFI
ELECTRICAL CHARACTERISTICS
(TCASE =25
°
C UNLESS OTHERWISE SPECIFIED)
ON/OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
DS
= V
GS
, I
D
= 100
μ
A
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
SWITCHING ON
Symbol
t
d(on)
t
r
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
3. C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80%
V
DSS
.
Test Conditions
I
D
= 250
μ
A, V
GS
= 0
Min.
600
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μ
A
μ
A
μ
A
V
GS
=
±
20V
±
10
V
GS(th)
Gate Threshold Voltage
3
3.75
4.5
V
R
DS(on)
Static Drain-source On
Resistance
V
GS
= 10V, I
D
= 4.5 A
0.65
0.75
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 4.5 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
7.8
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
1370
156
37
pF
pF
pF
C
oss eq.
(3)
Equivalent Output
Capacitance
V
GS
= 0V,V
DS
= 0V to 480V
90
pF
Parameter
Test Conditions
V
DD
= 300 V, I
D
= 4 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
Min.
Typ.
20
20
Max.
Unit
ns
ns
Turn-on Delay Time
Rise Time
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 480V, I
D
= 8 A,
V
GS
= 10V
50
10
25
70
nC
nC
nC
Parameter
Test Conditions
V
DD
= 300 V,I
D
= 4 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 3)
Min.
Typ.
55
30
Max.
Unit
ns
ns
Turn-off Delay Time
Fall Time
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 480V, I
D
= 8 A,
R
G
= 4.7
,
V
GS
= 10V
(Inductive Load see, Figure 5)
18
18
36
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
10
36
Unit
A
A
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
I
SD
= 10 A, V
GS
= 0
I
SD
= 8 A, di/dt = 100A/
μ
s
V
DD
= 40V, T
j
= 150
°
C
(see test circuit, Figure 5)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
570
4.3
15
ns
μ
C
A
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STH10NC60 | N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH10NC60FI | N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH11020 | TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA |
| STH11022 | TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA |
| STI2002 | TRANSISTOR | BJT | DARLINGTON | NPN | 80V V(BR)CEO | TO-92 |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STH10NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH10NC60FI | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 10A - TO-247/ISOWATT218 PowerMesh⑩II MOSFET |
| STH10NK60ZFI | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 10A I(D) | TO-218VAR |
| STH11020 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 200V V(BR)CEO | 15A I(C) | TO-218AA |
| STH11022 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 250V V(BR)CEO | 15A I(C) | TO-218AA |
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