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參數(shù)資料
| 型號： | STE70NM50 |
| 廠商： | 意法半導體 |
| 英文描述： | N-CHANNEL 500V - 0.045ohm - 70A ISOTOP Zener-Protected MDmesh⑩Power MOSFET |
| 中文描述： | N溝道500V - 0.045ohm - 70A條1000V的集電極齊納⑩保護的MDmesh功率MOSFET |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 288K |
| 代理商： | STE70NM50 |
3/8
STE70NM50
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
r(Voff)
t
f
t
c
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
rrm
t
rr
Q
rr
I
rrm
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
GATE-SOURCE ZENER DIODE
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied from gate to source. In this respect the 25V Zener voltage is appropriate to achieve an efficient
and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid
the usage of external components.
Test Conditions
V
DD
= 250V, I
D
= 30A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 400V, I
D
= 60A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
51
ns
t
r
Rise Time
58
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
190
266
nC
Gate-Source Charge
53
nC
Gate-Drain Charge
97
nC
Parameter
Test Conditions
V
DD
= 400V, I
D
= 60A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
Min.
Typ.
Max.
Unit
Off-voltage Rise Time
51
ns
Fall Time
46
ns
Cross-over Time
108
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
60
A
Source-drain Current (pulsed)
240
A
Forward On Voltage
I
SD
= 60A, V
GS
= 0
I
SD
= 60A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 25°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
532
9.9
37
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 60A, di/dt = 100A/μs,
V
DD
= 100 V, T
j
= 150°C
(see test circuit, Figure 5)
636
13.4
42
ns
μC
A
Parameter
Test Conditions
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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