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參數(shù)資料
| 型號(hào)： | STW11NB80 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁(yè)數(shù)： | 1/14頁(yè) |
| 文件大小： | 582K |
| 代理商： | STW11NB80 |
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1/14
October 2005
STP11NM80 - STF11NM80
STB11NM80 - STW11NM80
N-CHANNEL 800V - 0.35
- 11 A TO-220 /FP/D
2
PAK/TO-247
MDmesh MOSFET
Table 1: General Features
■
TYPICAL R
DS
(on) = 0.35
■
LOW GATE INPUT RESISTANCE
■
LOW INPUT CAPACITANCE AND GATE
CHARGE
■
BEST R
DS
(on)*Qg IN THE INDUSTRY
DESCRIPTION
The MDmesh associates the Multiple Drain pro-
cess with the Company’s PowerMesh horizontal
layout assuring an oustanding low on-resistance.
The adoption of the Company’s proprietary strip
technique yields overall dynamic performance that
is significantly better than that of similar competi-
tion’s products.
APPLICATIONS
The 800 V MDmesh family is very suitable for
single switch applications in particular for Flyback
and Forward converter topologies and for ignition
circuits in the field of lighting.
Table 2: Order Codes
Figure 1: Package
Figure 2: Internal Schematic Diagram
TYPE
V
DSS
R
DS(on)
R
DS(on)
*Q
g
I
D
STP11NM80
STF11NM80
STB11NM80
STW11NM80
800 V
800 V
800 V
800 V
< 0.40
< 0.40
< 0.40
< 0.40
14
nC
14
nC
14
nC
14
nC
11 A
11 A
11 A
11 A
1
2
3
1
3
1
2
3
1
2
3
TO-220
D
2
PAK
TO-247
TO-220FP
SALES TYPE
MARKING
PACKAGE
PACKAGING
STP11NM80
P11NM80
TO-220
TUBE
STF11NM80
F11NM80
TO-220FP
TUBE
STB11NM80T4
B11NM80
D
2
PAK
TAPE & REEL
STW11NM80
W11NM80
TO-247
TUBE
Rev. 2
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STF21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STB21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STP21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STW21NM50N | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
| STB21NM50N-1 | N-CHANNEL 500V - 0.15ohm - 18A TO-220/FP/D2/I2PAK/TO-247 SECOND GENERATION MDmesh MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STW11NK100Z | 功能描述:MOSFET N-Ch 1000 Volt 8.3 A Zener SuperMESH RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW11NK90Z | 功能描述:MOSFET N Ch 900V Zener SuperMESH 9.2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW11NM65N | 功能描述:MOSFET N-Channel 650V Pwr Mosfet RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW11NM80 | 功能描述:MOSFET N-Ch 800 Volt 11 Amp Power MDmesh RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STW120NF10 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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