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參數(shù)資料
| 型號： | STW11NB80 |
| 廠商： | 意法半導體 |
| 英文描述： | CONNECTOR ACCESSORY |
| 中文描述： | 連接器附件 |
| 文件頁數(shù)： | 3/14頁 |
| 文件大?。?/td> | 582K |
| 代理商： | STW11NB80 |
3/14
STP11NM80 - STF11NM80 - STB11NM80 - STW11NM80
ELECTRICAL CHARACTERISTICS
(T
CASE
=25°C UNLESS OTHERWISE SPECIFIED)
Table 6: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 250 μA
R
DS(on)
Static Drain-source On
Resistance
Table 7: Dynamic
Symbol
g
fs
(1)
Table 8: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
800
Typ.
Max.
Unit
V
V
DS
= Max Rating
10
100
μA
μA
V
GS
= ± 30V
100
nA
3
4
5
V
V
GS
= 10V, I
D
=5.5 A
0.35
0.40
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 7.5 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
8
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Gate Input Resistance
1630
750
30
pF
pF
pF
R
G
f=1 MHz Gate DC Bias = 0
Test Signal Level = 20mV
Open Drain
V
DD
= 400 V, I
D
= 5.5 A
R
G
= 4.7
V
GS
= 10 V
(Resistive Load see, Figure 4)
2.7
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
22
17
46
15
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 640 V, I
D
= 11 A,
V
GS
= 10V
43.6
11.6
21
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
11
44
Unit
A
A
Source-drain Current
I
SD
= 11 A, V
GS
= 0
I
SD
= 11 A, di/dt = 100 A/μs
V
DD
= 50 V, T
j
= 25°C
(see test circuit, Figure 5)
0.86
V
Reverse Recovery Time
Reverse Recovery Charge
612
7.22
23.6
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 11 A, di/dt = 100 A/μs
V
DD
= 50 V, T
j
= 150°C
(see test circuit, Figure 5)
970
11.25
23.2
ns
μC
A
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