參數(shù)資料
型號(hào)： STE70NM50
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 500V - 0.045ohm - 70A ISOTOP Zener-Protected MDmesh⑩Power MOSFET
中文描述： N溝道500V - 0.045ohm - 70A條1000V的集電極齊納⑩保護(hù)的MDmesh功率MOSFET
文件頁(yè)數(shù)： 1/8頁(yè)
文件大小： 288K
代理商： STE70NM50
1/8
September 2002
STE70NM50
N-CHANNEL 500V - 0.045
- 70A ISOTOP
Zener-Protected MDmeshPower MOSFET
n
TYPICAL R
DS
(on) = 0.045
n
HIGH dv/dt AND AVALANCHE CAPABILITIES
n
IMPROVED ESD CAPABILITY
n
LOW INPUT CAPACITANCE AND GATE
CHARGE
n
LOW GATE INPUT RESISTANCE
n
TIGHT PROCESS CONTROL
n
INDUSTRY’S LOWEST ON-RESISTANCE
DESCRIPTION
The MDmesh
is a new revolutionary MOSFET
technology that associates the Multiple Drain pro-
cess with the Company’s PowerMESH horizontal
layout. The resulting product has an outstanding low
on-resistance, impressively high dv/dt and excellent
avalanche characteristics. The adoption of the
Company’s proprietary strip technique yields overall
dynamic performance that is significantly better than
that of similar competition’s products.
APPLICATIONS
The MDmesh family is very suitable for increasing
power density of high voltage converters allowing
system miniaturization and higher efficiencies.
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25°C
I
D
Drain Current (continuous) at T
C
= 100°C
I
DM
(
l
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
V
ESD(G-S)
Gate source ESD(HBM-C=100pF, R=15K
)
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STE70NM50
500V
< 0.05
70 A
Parameter
Value
Unit
500
V
500
V
±30
V
70
A
44
A
280
A
600
W
6
KV
5
15
W/°C
V/ns
–65 to 150
°C
150
°C
(1)I
SD
≤
60A, di/dt
≤
400A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STE70NM60 功能描述:MOSFET N-Ch 600 Volt 70 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STE750-75T4KI 功能描述:鉭質(zhì)電容器-濕式 75volts 750uF 10% T4 case size RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
STE750-75T4KX 制造商:Vishay Sprague 功能描述:SUPER-TAN LOW ESR 750UF 10% 75V T4 CASE UNINSULATED - Bulk
STE750-75T4MI 功能描述:鉭質(zhì)電容器-濕式 75volts 750uF 20% T4 case size RoHS:否 制造商:Vishay/Tansitor 電容:2800 uF 電壓額定值:35 V ESR:0.35 Ohms 容差:20 % 端接類型:Axial 工作溫度范圍:- 55 C to + 85 C 制造商庫(kù)存號(hào):T4 Case 外殼直徑:9.52 mm 外殼長(zhǎng)度:26.97 mm 外殼寬度: 外殼高度: 系列:STE 產(chǎn)品:Tantalum Wet Hermetically Sealed 封裝:Bulk
STE800P 制造商:STMicroelectronics 功能描述:8 PORT FAST ETHERNET TRANSCEIVER - Bulk
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