參數(shù)資料
型號(hào)： STD29NF03L
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 30V - 0.018 ohm - 29A DPAK LOW GATE CHARGE STripFET POWER MOSFET
中文描述： N溝道30V的- 0.018歐姆-第29A條的DPAK低柵極電荷STripFET功率MOSFET
文件頁(yè)數(shù)： 1/6頁(yè)
文件大小： 47K
代理商： STD29NF03L
STD29NF03L
N-CHANNEL 30V - 0.018
- 29A DPAK
LOW GATE CHARGE STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.018
I
TYPICAL Q
g
= 18 nC @ 10V
I
OPTIMAL R
DS(on)
x Q
g
TRADE-OFF
I
CONDUCTION LOSSESREDUCED
I
SWITCHING LOSSESREDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique ”Single
Feature Size
” strip-based process. The resul-
ting transistor shows the best trade-off between
on-resistance and gate charge. When used as
high and low side in buck regulators, it gives the
best performancein termsof both conductionand
switching losses. This is extremely important for
motherboards where fast switching and high effi-
ciency are of paramountimportance.
APPLICATIONS
I
SPECIFICALLYDESIGNED AND
OPTIMISEDFOR HIGH EFFICIENCYCPU
CORE DC/DC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
May 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
(
)
I
D
(
)
I
DM
(
)
P
tot
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
30
V
±
20
20
V
A
20
A
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
80
A
45
W
0.3
W/
o
C
o
C
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
)
Current Limited By The Package
(
)
Pulse widthlimited by safe operating area
175
TYPE
V
DSS
R
DS(on)
< 0.023
I
D
STD29NF03L
30 V
29 A
ADD SUFFIX ”T4”FOR ORDERING IN TAPE & REEL
1
3
DPAK
TO-252
(Suffix ”T4”)
1/6
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD29NF03L-1 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 29A I(D) | TO-251AA
STD29NF03LT4 功能描述:MOSFET N-Ch 30 Volt 29 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2HNK60Z 功能描述:MOSFET N Ch 600V Zener SuprMESH 4.4 A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2HNK60Z-1 功能描述:MOSFET N-Ch, 600V-4.4ohms Zener SuperMESH 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2LN60K3 功能描述:MOSFET N-Ch 600V 4ohm 2A SuperMESH3 FET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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