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參數(shù)資料
| 型號： | STD30NE06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 60V-0.025Ω-30A-DPAK STripFETTM ” Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道60V的，0.025Ω- 30A條，DPAK封裝STripFETTM“功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 54K |
| 代理商： | STD30NE06L |
STD30NE06L
N - CHANNEL 60V - 0.025
- 30A - DPAK
STripFET
" POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.025
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW GATE CHARGE 100
o
C
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR TAPE & REEL AND OTHER
PACKAGING OPTIONS CONTACT SALES
OFFICES
DESCRIPTION
This Power Mosfet is the latest development of
SGS-THOMSON unique "Single Feature Size
"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalance characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
INTERNAL SCHEMATIC DIAGRAM
July 1998
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
60
V
60
V
V
GS
±
20
30
V
I
D
A
I
D
21
A
I
DM
(
)
120
A
P
tot
55
W
Derating Factor
0.37
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
7
V/ns
o
C
T
stg
Storage Temperature
-65 to 175
T
j
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area (
1
) I
SD
≤
20 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
175
o
C
TYPE
V
DSS
R
DS(on)
< 0.03
I
D
STD30NE06L
60 V
30 A
1
3
DPAK
TO-252
(Suffix "T4")
1/5
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| STD30NF03L | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Operating Temp. Max:125 C RoHS Compliant: Yes |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD30NE06LT4 | 功能描述:MOSFET N-Ch 60 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NE06T4 | 功能描述:MOSFET N-CH 60V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET |
| STD30NF03L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.020ohm - 30A - DPAK/IPAK STripFET TM II Power MOSFET |
| STD30NF03L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-251AA |
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