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參數(shù)資料
| 型號： | STD30NE06L |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel 60V-0.025Ω-30A-DPAK STripFETTM ” Power MOSFET(N溝道功率MOSFET) |
| 中文描述： | N溝道60V的，0.025Ω- 30A條，DPAK封裝STripFETTM“功率MOSFET（不適用溝道功率MOSFET的） |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 54K |
| 代理商： | STD30NE06L |
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
2.72
100
1.5
275
o
C/W
oC/W
o
C/W
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 25 V)
30
A
E
AS
100
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
Gate-body Leakage
Current (V
DS
= 0)
I
D
= 250
μ
A V
GS
= 0
60
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
=125
o
C
V
GS
=
±
20 V
1
10
μ
A
μ
A
nA
I
GSS
±
100
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
V
DS
= V
GS
I
D
= 250
μ
A
1
1.7
2.5
V
R
DS(on)
V
GS
= 10V I
D
= 15 A
V
GS
= 5V I
D
= 15A
0.022
0.025
0.028
0.030
I
D(on)
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
30
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=15 A
15
25
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
2370
350
90
pF
pF
pF
STD30NE06L
2/5
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD30NE06LT4 | 功能描述:MOSFET N-Ch 60 Volt 30 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NE06T4 | 功能描述:MOSFET N-CH 60V 30A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD30NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 30V - 0.020 ohm - 30A DPAK STripFET POWER MOSFET |
| STD30NF03L_07 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30V - 0.020ohm - 30A - DPAK/IPAK STripFET TM II Power MOSFET |
| STD30NF03L-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 30A I(D) | TO-251AA |
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