參數(shù)資料
型號: STD35NF06T4
廠商: 意法半導(dǎo)體
英文描述: Progress in Power Switching(電源開關(guān)改進(jìn))
中文描述: 在電源開關(guān)的進(jìn)展(電源開關(guān)改進(jìn))
文件頁數(shù): 1/9頁
文件大?。?/td> 327K
代理商: STD35NF06T4
1/9
October 2001
STD35NF06
N-CHANNEL 60V - 0.018
- 35A DPAK
STripFETII MOSFET
(1)I
SD
35A, di/dt
100A/μs, V
DD
V
(BR)DSS
, T
j
T
JMAX.
INTERNAL SCHEMATIC DIAGRAM
I
TYPICAL R
DS
(on) = 0.018
I
EXTREMELY HIGH dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
GATE CHARGE MINIMIZED
DESCRIPTION
This Power Mosfet is the latest development of ST-
Microelectronics unique “Single Feature Size”
strip-based process. The resulting transistor shows
extremely high packing density for low on-resis-
tance, rugged avalance characteristics and less crit-
ical alignment steps therefore a remarkable
manufacturing reproducibility.
APPLICATIONS
I
SOLENOID AND RELAY DRIVERS
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt (1)
Peak Diode Recovery voltage slope
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
()Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STD35NF06
60 V
< 0.024
35 A
Parameter
Value
Unit
60
V
60
V
± 20
V
35
A
24.5
A
140
A
55
W
0.37
5
W/°C
V/ns
–55 to 175
°C
DPAK
1
3
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