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參數(shù)資料
| 型號： | STD35NF06T4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | Progress in Power Switching(電源開關(guān)改進(jìn)) |
| 中文描述： | 在電源開關(guān)的進(jìn)展（電源開關(guān)改進(jìn)） |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 327K |
| 代理商： | STD35NF06T4 |
3/9
STD35NF06
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
t
d(on)
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(2)
V
SD
(1)
t
rr
Q
rr
I
RRM
Note: 1.
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Parameter
Test Conditions
V
DD
= 30 V, I
D
= 27.5 A
R
G
= 4.7
V
GS
= 10 V
(see test circuit, Figure 3)
V
DD
= 48V, I
D
= 55 A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
Turn-on Delay Time
16
ns
t
r
Rise Time
8
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
44.5
60
nC
Gate-Source Charge
10.5
nC
Gate-Drain Charge
17.5
nC
Parameter
Test Conditions
V
DD
= 30V, I
D
= 27.5A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
36
15
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
35
A
Source-drain Current (pulsed)
140
A
Forward On Voltage
I
SD
= 35 A, V
GS
= 0
I
SD
= 35 A, di/dt = 100A/μs
V
DD
= 20V, T
j
= 150°C
(see test circuit, Figure 5)
1.5
V
Reverse Recovery Time
75
ns
Reverse Recovery Charge
170
nC
Reverse Recovery Current
4.5
A
Safe Operating Area
Thermal Impedence
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