參數(shù)資料
型號(hào)： STD2NB60
廠商： 意法半導(dǎo)體
英文描述： N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET
中文描述： ? -通道增強(qiáng)型MOSFET的PowerMESH
文件頁(yè)數(shù)： 1/11頁(yè)
文件大?。?/td> 228K
代理商： STD2NB60
1/11
April 2004
STD2NB60
STD2NB60-1
N-CHANNEL 600V - 3.3
- 2.6A DPAK/IPAK
PowerMESH MOSFET
REV. 2
Table 1. General Features
FEATURES SUMMARY
■
TYPICAL R
DS(on)
= 3.3
■
EXTREMELY HIGH dv/dt CAPABILITY
■
100% AVALANCHE TESTED
■
VERY LOW INTRINSIC CAPACITANCES
■
GATE CHARGE MINIMIZED
DESCRIPTION
Using the latest high voltage MESH OVERLAY
process, STMicroelectronics has designed an ad-
vanced family of power MOSFETs with outstand-
ing performances. The new patent pending strip
layout coupled with the Company’s proprietary
edge termination structure, gives the lowest
RDS(on) per area, exceptional avalanche and dv/
dt capabilities and unrivalled gate charge and
switching characteristics.
APPLICATIONS
■
SWITCH MODE POWER SUPPLIES (SMPS)
■
DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE
Figure 1. Package
Figure 2. Internal Schematic Diagram
Table 2. Order Codes
Type
V
DSS
R
DS(on)
I
D
STD2NB60
600 V
< 3.6
2.6 A
STD2NB60-1
600 V
< 3.6
2.6 A
3
2
1
1
3
IPAK
TO-251
DPAK
TO-252
Part Number
Marking
Package
Packaging
STD2NB60T4
D2NB60
DPAK
TAPE & REEL
STD2NB60-1
D2NB60
IPAK
TUBE
相關(guān)PDF資料
PDF描述
STD2NB60T4 N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET
STD30NE06L N-Channel 60V-0.025Ω-30A-DPAK STripFETTM ” Power MOSFET(N溝道功率MOSFET)
STD30NF03LT N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET
STD30NF03LTT4 N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET
STD30NF03L Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Operating Temp. Max:125 C RoHS Compliant: Yes
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STD2NB60-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET
STD2NB60T4 功能描述:MOSFET N-Ch 600 Volt 2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2NB80 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2NB80-1 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STD2NB80T4 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*