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參數(shù)資料
| 型號： | STD2NB60 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N - CHANNEL ENHANCEMENT MODE PowerMESH MOSFET |
| 中文描述： | ? -通道增強(qiáng)型MOSFET的PowerMESH |
| 文件頁數(shù)： | 11/11頁 |
| 文件大?。?/td> | 228K |
| 代理商： | STD2NB60 |
11/11
STD2NB60/STD2NB60-1
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相關(guān)PDF資料 |
PDF描述 |
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| STD2NB60T4 | N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET |
| STD30NE06L | N-Channel 60V-0.025Ω-30A-DPAK STripFETTM ” Power MOSFET(N溝道功率MOSFET) |
| STD30NF03LT | N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
| STD30NF03LTT4 | N-channel 30V - 0.017ohm - 30A - DPAK STripFET TM II Power MOSFET |
| STD30NF03L | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:100uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Operating Temp. Max:125 C RoHS Compliant: Yes |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STD2NB60-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 3.3OHM - 2.6A DPAK/IPAK PowerMESHTM MOSFET |
| STD2NB60T4 | 功能描述:MOSFET N-Ch 600 Volt 2 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NB80 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NB80-1 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STD2NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 1.9Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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