參數(shù)資料
型號(hào)： STB80NF75L-1
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET
中文描述： N溝道75V的- 0.008歐姆- 80A條TO-220/D2PAK/I2PAK STripFET⑩二功率MOSFET
文件頁數(shù)： 3/11頁
文件大?。?/td> 368K
代理商： STB80NF75L-1
3/11
STB80NF75L/-1/ STP80NF75L
SWITCHING ON
SWITCHING OFF
SOURCE DRAIN DIODE
(*)
Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
(
)
Pulse width limited by safe operating area.
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 37 V
R
G
= 4.7
(Resistive Load, Figure 3)
I
D
= 40 A
V
GS
= 4.5 V
30
145
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 60 V I
D
= 80 A V
GS
= 5V
110
20
55
140
nC
nC
nC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 37V
R
G
= 4.7
,
(Resistive Load, Figure 3)
I
D
= 40 A
V
GS
= 4.5 V
130
90
ns
ns
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current (pulsed)
80
320
A
A
V
SD
(*)
Forward On Voltage
I
SD
= 80A
V
GS
= 0
1.5
V
t
rr
Q
rr
I
RRM
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80 A
V
DD
= 25 V
(see test circuit, Figure 5)
di/dt = 100A/μs
T
j
= 150°C
105
340
9
ns
nC
A
ELECTRICAL CHARACTERISTICS
(continued)
Thermal Impedance
Safe Operating Area
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