- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄380761 > STB9NB50 (意法半導(dǎo)體) N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) PDF資料下載
參數(shù)資料
| 型號： | STB9NB50 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強模式MOSFET) |
| 中文描述： | N溝道增強模式PowerMESHTM MOSFET的（不適用溝道增強模式MOSFET的） |
| 文件頁數(shù)： | 1/8頁 |
| 文件大小： | 93K |
| 代理商： | STB9NB50 |
STB9NB50
N - CHANNEL ENHANCEMENT MODE
Power MESH
MOSFET
I
TYPICAL R
DS(on)
= 0.75
I
EXTREMELY HIGH dv/dt CAPABILITY
I
AVALANCHERUGGED TECHNOLOGY
I
100% AVALANCHE TESTED
I
REPETITIVE AVALANCHE DATA AT 100
o
C
I
VERYLOW INTRINSIC CAPACITANCE
I
GATECHARGE MINIMIZED
I
LOW LEAKAGECURRENT
I
APPLICATION ORIENTED
CHARACTERIZATION
I
FOR SMD D
2
PAK VERSION CONTACT
SALESOFFICE
APPLICATIONS
I
HIGH CURRENT, HIGH SPEEDSWITCHING
I
SWITCH MODE POWER SUPPLY (SMPS)
I
DC-AC CONVERTER FOR WELDING
EQUIPMENTAND UNINTERRUPTABLE
POWERSUPPLY (UPS)
INTERNAL SCHEMATIC DIAGRAM
March 1998
123
I
2
PAK
TO-262
(suffix ”-1”)
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
Drain-source Voltage (V
GS
= 0)
500
V
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
500
V
V
GS
±
30
V
I
D
8.6
A
I
D
5.4
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
34.4
A
125
W
Derating Factor
1.0
W/
o
C
dv/dt
(1)
Peak Diode Recovery voltage slope
4.5
V/ns
o
C
o
C
T
stg
Storage Temperature
-65 to 150
T
j
Max. Operating Junction Temperature
(
) Pulse width limitedby safe operating area
150
(
1
) I
SD
≤
9A, di/dt
≤
200 A/
μ
s, V
DD
≤
V
(BR)DSS
, Tj
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.85
I
D
STB9NB50
500 V
8.6 A
1/8
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB9NK60ZD | N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET |
| STB9NK60ZDT4 | N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET |
| STF9NK60ZD | N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET |
| STP9NK60ZD | N-CHANNEL 600V - 0.85? - 7A TO-220/TO-220FP/DPAK SuperFREDMesh MOSFET |
| STB9NK60ZFDT4 | N-CHANNEL 600V-0.85 Ohm-7A TO-220/TO-220FP/D2PAK Fast Diode SuperMESH MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB9NB50T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 500V V(BR)DSS | 8.6A I(D) | TO-263AB |
| STB9NB60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL 600V - 0.7ohm - 9A - I2PAK/D2PAK PowerMESH MOSFET |
| STB9NB60-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-262AA |
| STB9NB60T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 600V V(BR)DSS | 9A I(D) | TO-263AB |
| STB9NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 0.6ohm - 9A - D2PAK/I2PAK PowerMesh⑩II MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。