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參數(shù)資料
| 型號(hào)： | STB80NF75L-1 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 75V - 0.008 ohm - 80A TO-220/D2PAK/I2PAK STripFET⑩ II POWER MOSFET |
| 中文描述： | N溝道75V的- 0.008歐姆- 80A條TO-220/D2PAK/I2PAK STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 368K |
| 代理商： | STB80NF75L-1 |
1/11
November 2001
.
STP80NF75L
STB80NF75L STB80NF75L-1
N-CHANNEL 75V - 0.008
- 80A TO-220/D
2
PAK/I
2
PAK
STripFET II POWER MOSFET
I
TYPICAL R
DS
(on) = 0.008
I
EXCEPTIONAL dv/dt CAPABILITY
I
100% AVALANCHE TESTED
I
LOW THRESHOLD DRIVE
DESCRIPTION
This Power MOSFET is the latest development of
STMicroelectronis unique "Single Feature Size"
strip-based process. The resulting transistor
shows extremely high packing density for low on-
resistance, rugged avalanche characteristics and
less critical alignment steps therefore a remark-
able manufacturing reproducibility.
APPLICATIONS
I
HIGH CURRENT, HIGH SWITCHING SPEED
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
SOLENOID AND RELAY DRIVERS
TYPE
V
DSS
R
DS(on)
I
D
STP80NF75L
STB80NF75L
STB80NF75L-1
75 V
75 V
75 V
<0.01
<0.01
<0.01
80 A
80 A
80 A
1
2
3
TO-220
1
3
D
2
PAK
TO-263
I
2
PAK
TO-262
123
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(
)
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
)
Drain Current (pulsed)
P
tot
Total Dissipation at T
C
= 25°C
Derating Factor
dv/dt
(1)
Peak Diode Recovery voltage slope
E
AS (2)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
)Current Limited by Package
(
)
Pulse width limited by safe operating area.
(1) I
SD
≤
80A, di/dt
≤
960A/μs, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
(2) Starting T
j
= 25
o
C, I
D
= 40A, V
DD
= 40V
Parameter
Value
75
75
± 16
80
80
320
300
2
12
930
Unit
V
V
V
A
A
A
W
W/°C
V/ns
mJ
-55 to 175
°C
INTERNAL SCHEMATIC DIAGRAM
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