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參數(shù)資料
| 型號： | STB90NF03L |
| 廠商： | 意法半導體 |
| 英文描述： | Niobium Oxide Capacitor; Capacitor Type:Low ESR; Voltage Rating:6.3VDC; Capacitor Dielectric Material:Niobium Oxide; Capacitance:68uF; Capacitance Tolerance:+/- 20%; ESR:100mohm; Leaded Process Compatible:Yes RoHS Compliant: Yes |
| 中文描述： | N溝道30V的- 0.0056ohm - 90A型采用D2PAK低柵極電荷STripFET⑩功率MOSFET |
| 文件頁數(shù)： | 1/8頁 |
| 文件大?。?/td> | 246K |
| 代理商： | STB90NF03L |
1/8
October 2001
STB90NF03L
N-CHANNEL 30V - 0.0056
- 90A D
2
PAK
LOW GATE CHARGE STripFET POWER MOSFET
I
TYPICAL R
DS
(on) = 0.0056
I
TYPICAL Q
g
= 35 nC @ 5V
I
OPTIMAL R
DS
(on) x Q
g
TRADE-OFF
I
CONDUCTION LOSSES REDUCED
I
SWITCHING LOSSES REDUCED
DESCRIPTION
This application specific Power Mosfet is the third
generation of STMicroelectronics unique “Single
Feature Size
”
strip-based process. The resulting
transistor shows the best trade-off between on-re-
sistance and gate charge. When used as high and
low side in buck regulators, it gives the best perfor-
mance in terms of both conduction and switching
losses. This is extremely important for mother-
boards where fast switching and high efficiency are
of paramount importance.
APPLICATIONS
I
SPECIFICALLY DESIGNED AND OPTIMISED
FOR HIGH EFFICIENCY CPU CORE DC/DC
CONVERTERS
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuos) at T
C
= 25°C
I
D
Drain Current (continuos) at T
C
= 100°C
I
DM
(
G
)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25°C
Derating Factor
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
TYPE
V
DSS
R
DS(on)
I
D
STB90NF03L
30 V
< 0.0065
90 A
Parameter
Value
Unit
30
V
30
V
± 18
V
90
A
65
A
360
A
150
W
0.73
W/°C
– 55 to 175
°C
D
2
PAK
1
3
INTERNAL SCHEMATIC DIAGRAM
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB90NF03L-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0056ohm - 90A TO-220/I2PAK LOW GATE CHARGE STripFET⑩ POWER MOSFET |
| STB90NF3LL | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.0048 ohm - 80A D2PAK LOW GATE CHARGE STripFET⑩ II POWER MOSFET |
| STB90NF3LLT4 | 制造商:STMicroelectronics 功能描述: |
| STB95N3LLH6 | 功能描述:MOSFET N-channel 30 V 80 A DPAK RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB95N4F3 | 功能描述:MOSFET N-Ch 40V 5.0mOhm 80A STripFET III RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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