參數(shù)資料
型號(hào)： STB80NF06T4
廠商： 意法半導(dǎo)體
英文描述： N-CHANNEL 60V - 0.0065з - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET
中文描述： N溝道60V的- 0.0065з - 80A條TO-220/D2PAK/TO-247 STripFET二功率MOSFET
文件頁(yè)數(shù)： 3/10頁(yè)
文件大?。?/td> 225K
代理商： STB80NF06T4
3/10
STP80NF06 - STB80NF06 - STW80NF06
ELECTRICAL CHARACTERISTICS
(CONTINUED)
SWITCHING ON
Symbol
Parameter
t
d(on)
Turn-on Delay Time
SWITCHING OFF
Symbol
t
d(off)
t
f
SOURCE DRAIN DIODE
Symbol
I
SD
I
SDM
(1)
V
SD
(2)
t
rr
Q
rr
I
RRM
Note: 1. Pulsed: Pulse duration = 300 μs, duty cycle 1.5 %.
2. Pulse width limited by safe operating area.
Test Conditions
V
DD
= 27V, I
D
= 40A
R
G
= 4.7
V
GS
= 10V
(see test circuit, Figure 3)
V
DD
= 80V, I
D
= 80A,
V
GS
= 10V
Min.
Typ.
Max.
Unit
25
ns
t
r
Rise Time
85
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
115
24
46
150
nC
nC
nC
Parameter
Test Conditions
V
DD
= 27V, I
D
= 40A,
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 3)
Min.
Typ.
70
25
Max.
Unit
ns
ns
Turn-off-Delay Time
Fall Time
t
d(off)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
Vclamp =44V, I
D
=80A
R
G
= 4.7
,
V
GS
= 10V
(see test circuit, Figure 5)
85
75
110
ns
ns
ns
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
Source-drain Current
80
A
Source-drain Current (pulsed)
320
A
Forward On Voltage
I
SD
= 80A, V
GS
= 0
1.5
V
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
I
SD
= 80A, di/dt = 100A/μs,
V
DD
= 50V, T
j
= 150
°
C
(see test circuit, Figure 5)
80
250
6.4
ns
nC
A
Thermal Impedance
Safe Operating Area
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