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參數(shù)資料
| 型號(hào)： | STB80NF06T4 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 60V - 0.0065з - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET |
| 中文描述： | N溝道60V的- 0.0065з - 80A條TO-220/D2PAK/TO-247 STripFET二功率MOSFET |
| 文件頁(yè)數(shù)： | 2/10頁(yè) |
| 文件大?。?/td> | 225K |
| 代理商： | STB80NF06T4 |
STP80NF06 - STB80NF06 - STW80NF06
2/10
ABSOLUTE MAXIMUM RATINGS
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
(*)
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
( )
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
E
AS
(1)
Single Pulse Avalanche Energy
T
stg
Storage Temperature
T
j
Max. Operating Junction Temperature
(
G
) Pulse width limited by safe operating area
(1) Starting T
= 25
°
C, I
= 40A, V
DD
= 40V
(*) Current Limited by wire bonding
THERMAL DATA
Rthj-case
Rthj-amb
T
l
ELECTRICAL CHARACTERISTICS
(T
CASE
= 25
°
C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON (1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Parameter
Value
Unit
60
V
60
V
±20
V
80
A
80
A
320
A
300
W
2
W/
°
C
870
mJ
–
65 to 175
°
C
175
°
C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.5
62.5
°
C/W
°
C/W
Maximum Lead Temperature For Soldering Purpose
300
°
C
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
60
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
μA
10
μA
V
GS
= ±20V
±100
nA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 40 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
0.0065
0.010
Parameter
Test Conditions
V
DS
> 2.5 V
,
I
D
=18 A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
20
Max.
Unit
S
Forward Transconductance
Input Capacitance
3850
pF
Output Capacitance
800
pF
Reverse Transfer
Capacitance
250
pF
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| STB80NF10T4 | 功能描述:MOSFET N-Ch 100 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NF10-T4 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 80A I(D) | TO-263AB |
| STB80NF10T4 | 制造商:STMicroelectronics 功能描述:MOSFET |
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