參數(shù)資料
型號： STB80NF03L-04T4
廠商： 意法半導(dǎo)體
元件分類： 圓形連接器
英文描述： Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Metal; Series:PC C-26482 Series I; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle
中文描述： N溝道30V的- 0.0035ohm - 80A條D2PAK/I2PAK/TO-220 STripFET⑩二功率MOSFET
文件頁數(shù)： 3/7頁
文件大?。?/td> 57K
代理商： STB80NF03L-04T4
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Delay Time
Rise Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
DD
= 24 V I
D
= 80 A V
GS
= 4.5 V
I
D
= 40 A
V
GS
= 4.5 V
50
230
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
100
22
42
135
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(off)
t
f
Turn-off Delay Time
Fall Time
V
DD
= 15 V
R
G
= 4.7
(Resistive Load, see fig. 3)
V
clamp
= 24 V
R
G
= 4.7
(Inductive Load, see fig. 5)
I
D
= 40 A
V
GS
= 4.5 V
220
130
ns
ns
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
I
D
= 80 A
V
GS
= 4.5 V
65
250
340
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
80
320
A
A
V
SD
(
)
t
rr
I
SD
= 80 A
I
SD
= 80 A
V
DD
= 15 V
(see test circuit, fig. 5)
V
GS
= 0
1.5
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
di/dt = 100 A/
μ
s
T
j
= 150
o
C
70
0.14
4
ns
μ
C
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STB80NF03L-04
3/7
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB80NF03L-04T4_09 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30 V, 0.0035 Ω, 80 A D2PAK STripFET? II Power MOSFET
STB80NF04 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 40V - 0.008 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET
STB80NF06 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET
STB80NF06T4 功能描述:MOSFET N-Ch 60 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB80NF10 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET
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