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參數(shù)資料
| 型號： | STB80NF03L-04T4 |
| 廠商： | 意法半導(dǎo)體 |
| 元件分類： | 圓形連接器 |
| 英文描述： | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Metal; Series:PC C-26482 Series I; No. of Contacts:4; Connector Shell Size:8; Connecting Termination:Solder; Circular Shell Style:Wall Mount Receptacle |
| 中文描述： | N溝道30V的- 0.0035ohm - 80A條D2PAK/I2PAK/TO-220 STripFET⑩二功率MOSFET |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 57K |
| 代理商： | STB80NF03L-04T4 |
STB80NF03L-04
N-CHANNEL 30V - 0.0035
- 80A TO-262/TO-263
STripFET
POWER MOSFET
PRELIMINARY DATA
I
TYPICAL R
DS(on)
= 0.0035
I
EXCEPTIONAL dv/dtCAPABILITY
I
100%AVALANCHE TESTED
I
LOW THRESHOLD DRIVE
I
THROUGH-HOLE I2PAK (TO-262) POWER
PACKAGEIN TUBE(SUFFIX ”-1”)
I
SURFACE-MOUNTING D2PAK (TO-263)
POWERPACKAGEIN TUBE(NO SUFFIX)
OR IN TAPE & REEL (SUFFIX ”T4”)
DESCRIPTION
This Power Mosfet is the latest development of
STMicroelectronics
unique
Size
”
strip-based
process.
transistor shows extremely high packing density
for
low
on-resistance,
characteristics and less critical alignment steps
therefore
a
remarkable
reproducibility.
”Single
The
Feature
resulting
rugged
avalanche
manufacturing
APPLICATIONS
I
HIGH CURRENT, HIGH SPEED SWITCHING
I
MOTOR CONTROL, AUDIO AMPLIFIERS
I
DC-DC & DC-AC CONVERTERS
I
AUTOMOTIVE ENVIRONMENT (INJECTION,
ABS, AIR-BAG, LAMPDRIVERS,Etc. )
INTERNAL SCHEMATIC DIAGRAM
March 2000
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
DS
V
DGR
V
GS
I
D
Drain-source Voltage (V
GS
= 0)
Drain- gate Voltage (R
GS
= 20 k
)
Gate-source Voltage
Drain Current (continuous) at T
c
= 25
o
C
Drain Current (continuous) at T
c
= 100
o
C
30
V
30
V
±
20
80
V
A
I
D
56
A
I
DM
(
)
P
tot
Drain Current (pulsed)
Total Dissipation at T
c
= 25
o
C
Derating Factor
320
A
210
W
1.43
W/
o
C
dv/dt
Peak Diode Recovery voltage slope
3.5
V/ns
o
C
o
C
T
stg
T
j
Storage Temperature
-65 to 175
Max. Operating Junction Temperature
(
) Pulse width limited by safe operating area
175
(
1
) I
SD
≤
80 A, di/dt
≤
300 A/
μ
s, V
DD
≤
V
(BR)DSS
, T
j
≤
T
JMAX
TYPE
V
DSS
R
DS(on)
< 0.004
I
D
STB80NF03L-04
30 V
80 A
123
1
3
I
2
PAK
TO-262
(suffix”-1”)
D
2
PAK
TO-263
(suffix ”T4”)
1/7
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB80NF03L-04T4_09 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 30 V, 0.0035 Ω, 80 A D2PAK STripFET? II Power MOSFET |
| STB80NF04 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-CHANNEL 40V - 0.008 OHM - 80A D2PAK/TO-220 STRIPFET II POWER MOSFET |
| STB80NF06 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 60V - 0.0065OHM - 80A TO-220/D2PAK/TO-247 STripFET II POWER MOSFET |
| STB80NF06T4 | 功能描述:MOSFET N-Ch 60 Volt 80 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB80NF10 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 100V - 0.012OHM - 80A - TO-220 / D2PAK Low gate charge STRIPFET TM II Power MOSFET |
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