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參數(shù)資料
| 型號： | STB55NE06 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強模式功率MOSFET) |
| 中文描述： | N溝道增強模式“的單一的功能SIZETM”功率MOSFET（不適用溝道增強模式功率MOSFET的） |
| 文件頁數(shù)： | 8/8頁 |
| 文件大?。?/td> | 98K |
| 代理商： | STB55NE06 |
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STB55NE06
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相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB55NF06L-1 | Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight |
| STP55NF06L | N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET |
| STB55NF06L | N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET |
| STP55NF06LFP | N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET |
| STB5600 | GPS RF FRONT-END IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB55NE06L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET |
| STB55NF03L | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET |
| STB55NF03L-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET |
| STB55NF03LT4 | 功能描述:MOSFET N-Ch 30 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB55NF06 | 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 50A D2PAK |
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