參數(shù)資料
型號(hào): STB55NE06
廠商: 意法半導(dǎo)體
英文描述: N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET)
中文描述: N溝道增強(qiáng)模式“的單一的功能SIZETM”功率MOSFET(不適用溝道增強(qiáng)模式功率MOSFET的)
文件頁(yè)數(shù): 6/8頁(yè)
文件大小: 98K
代理商: STB55NE06
Fig. 1:
Unclamped InductiveLoad TestCircuit
Fig. 3:
Switching Times Test Circuits For
ResistiveLoad
Fig. 2:
Unclamped InductiveWaveform
Fig. 4:
Gate Charge test Circuit
Fig. 5:
TestCircuit For InductiveLoad Switching
And Diode RecoveryTimes
STB55NE06
6/8
相關(guān)PDF資料
PDF描述
STB55NF06L-1 Circular Connector; MIL SPEC:MIL-C-26482, Series I, Crimp; Body Material:Aluminum; Series:PT06; No. of Contacts:55; Connector Shell Size:22; Connecting Termination:Crimp; Circular Shell Style:Straight Plug; Body Style:Straight
STP55NF06L N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STB55NF06L N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STP55NF06LFP N-CHANNEL 60V - 0.014ohm - 55A TO-220/FP/D2PAK/I2PAK STripFET⑩II POWER MOSFET
STB5600 GPS RF FRONT-END IC
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
STB55NE06L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N - CHANNEL ENHANCEMENT MODE SINGLE FEATURE SIZE POWER MOSFET
STB55NF03L 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 ohm - 55A D2PAK STripFET] POWER MOSFET
STB55NF03L-1 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 30V - 0.01 W - 55A TO-220/D2PAK/I2PAK STripFET II POWER MOSFET
STB55NF03LT4 功能描述:MOSFET N-Ch 30 Volt 55 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
STB55NF06 制造商:STMicroelectronics 功能描述:MOSFET N-Channel 60V 50A D2PAK