參數(shù)資料
型號： STB55NE06
廠商： 意法半導(dǎo)體
英文描述： N-Channel Enhancement Mode "SINGLE FEATURE SIZETM " Power MOSFET(N溝道增強(qiáng)模式功率MOSFET)
中文描述： N溝道增強(qiáng)模式“的單一的功能SIZETM”功率MOSFET（不適用溝道增強(qiáng)模式功率MOSFET的）
文件頁數(shù)： 2/8頁
文件大小： 98K
代理商： STB55NE06
THERMAL DATA
R
thj-case
Rthj-amb
R
thc-sink
T
l
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Thermal Resistance Case-sink
Maximum Lead Temperature For Soldering Purpose
Max
Max
Typ
1.15
62.5
0.5
300
o
C/W
oC/W
C/W
o
C
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max,
δ
< 1%)
Single Pulse Avalanche Energy
(starting T
j
= 25
C, I
D
= I
AR
, V
DD
= 25 V)
55
A
E
AS
200
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
I
D
= 250
μ
A
V
GS
= 0
60
V
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating
V
DS
= Max Rating
T
c
= 125
o
C
1
10
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
20 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
R
DS(on)
Gate Threshold Voltage V
DS
= V
GS
Static Drain-source On
Resistance
I
D
= 250
μ
A
I
D
= 27.5 A
2
3
4
V
V
GS
= 10V
0.019
0.022
I
D(on)
On State Drain Current
V
DS
> I
D(on)
x R
DS(on)max
V
GS
= 10 V
55
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
=27.5 A
25
35
S
C
iss
C
oss
C
rss
V
DS
= 25 V
f = 1 MHz
V
GS
= 0
3050
380
100
4000
500
130
pF
pF
pF
STB55NE06
2/8
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參數(shù)描述
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